Publications

Found 1578 results
Author [ Title(Asc)] Type Year
A B C D E F G H I J K L M N O P Q R S T U V W X Y Z 
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Golan, Y., P. Fini, S. P. DenBaars, and J. Speck, "???????: ????∑??∑????∑???????= Inorganic materials 4 (271), 633-641, 1997-11-01", J. Eur. Ceram. Soc, vol. 12, pp. 123, 1993.
Β
Green, A. J., J. Speck, G. Xing, P. Moens, F. Allerstam, K. Gumaelius, T. Neyer, A. Arias-Purdue, V. Mehrotra, A. Kuramata, et al., "β-Gallium oxide power electronics", APL Materials, vol. 10, 02, 2022.
Zhang, Y., A. Mauze, F. Alema, A. Osinsky, T. Itoh, and J. S. Speck, "β-Ga2O3 lateral transistors with high aspect ratio fin-shape channels", Japanese Journal of Applied Physics, vol. 60, pp. 014001, dec, 2020.
Farzana, E., F. Alema, T. Itoh, N. Hendricks, A. Mauze, A. Osinsky, and J. Speck, "β-Ga2O3 epitaxy and power devices from metal-organic chemical vapor deposition", Oxide-based Materials and Devices XIII: International Society for Optics and Photonics, 2022.
Tsai, M-Y., O. Bierwagen, M. E. White, and J. S. Speck, "β-Ga 2 O 3 growth by plasma-assisted molecular beam epitaxy", Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 28, no. 2: AVS, pp. 354–359, 2010.
Kaun, S. W., F. Wu, and J. S. Speck, "β-(AlxGa1- x) 2O3/Ga2O3 (010) heterostructures grown on β-Ga2O3 (010) substrates by plasma-assisted molecular beam epitaxy", Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 33, no. 4: AVS, pp. 041508, 2015.
Kaun, S. W., F. Wu, J. S. Speck, and others, "β-(Al ${$sub x$}$ Ga ${$sub 1- x$}$)${$sub 2$}$ O ${$sub 3$}$/Ga ${$sub 2$}$ O ${$sub 3$}$(010) heterostructures grown on β-Ga ${$sub 2$}$ O ${$sub 3$}$(010) substrates by plasma-assisted molecular beam epitaxy", Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, vol. 33, no. 4, 2015.
Z
Dora, Y., S. Han, D. Klenov, P. J. Hansen, K-soo. No, U. K. Mishra, S. Stemmer, and J. S. Speck, "ZrO 2 gate dielectrics produced by ultraviolet ozone oxidation for GaN and AlGaN/ GaN transistors", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 24, no. 2: AVS, pp. 575–581, 2006.
X
Nagata, T., O. Bierwagen, ME. White, MY. Tsai, Y. Yamashita, H. Yoshikawa, N. Ohashi, K. Kobayashi, T. Chikyow, and JS. Speck, "XPS study of Sb-/In-doping and surface pinning effects on the Fermi level in SnO 2 (101) thin films", Applied Physics Letters, vol. 98, no. 23: AIP, pp. 232107, 2011.
Wong, MH., DF. Brown, ML. Schuette, H. Kim, V. Balasubramanian, W. Lu, JS. Speck, and UK. Mishra, "X-band power performance of N-face GaN MIS-HEMTs", Electronics Letters, vol. 47, no. 3: IET Digital Library, pp. 214–215, 2011.
Pei, Y., C. Poblenz, AL. Corrion, R. Chu, L. Shen, JS. Speck, and UK. Mishra, "X-and Ka-band power performance of AlGaN/GaN HEMTs grown by ammonia-MBE", Electronics Letters, vol. 44, no. 9: IET, pp. 598–598, 2008.
W
Jiang, R., E. Xia Zhang, M. W. McCurdy, J. Chen, X. Shen, P. Wang, D. M. Fleetwood, R. D. Schrimpf, S. W. Kaun, E. C. H. Kyle, et al., "Worst-case bias for proton and 10-keV X-ray irradiation of AlGaN/GaN HEMTs", IEEE Transactions on Nuclear Science, vol. 64, no. 1: IEEE, pp. 218–225, 2017.
Barabash, RI., G. E. Ice, BA. Haskell, S. Nakamura, JS. Speck, and W. Liu, "White X-ray microdiffraction analysis of defects, strain and tilts in a free standing GaN film", physica status solidi (b), vol. 245, no. 5: Wiley Online Library, pp. 899–902, 2008.
Kelchner, K. M., J. S. Speck, N. A. Pfaff, and S. P. DenBaars, White light source employing a III-nitride based laser diode pumping a phosphor, 2017.
Craven, MD., P. Waltereit, JS. Speck, and SP. DenBaars, "Well-width dependence of photoluminescence emission from a-plane GaN/AlGaN multiple quantum wells", Applied physics letters, vol. 84, no. 4: AIP, pp. 496–498, 2004.
Speck, J., T. Baker, and B. Haskell, Wafer separation technique for the fabrication of free-standing (Al, In, Ga) N wafers, 2006.
Toledo, N., C. Neufeld, M. Scarpulla, T. Buehl, S. Cruz, A. Gossard, S. DenBaars, J. Speck, and U. Mishra, "Wafer Bonded GaAs-Sapphire for Photovoltaic Applications via Adhesive Bonding", Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States.[np]. Jun: Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States, 2011.
V
Seres, J., E. Seres, C. Serrat, E. C. Young, J. S. Speck, and T. Schumm, "VUV Frequency Comb by Cavity-Enhanced High Harmonic Generation on Solid Surfaces", Laser Congress 2019 (ASSL, LAC, LS&C): Optical Society of America, 2019.
Speck, J. S., A. Tyagi, A. E. Romanov, S. Nakamura, and S. P. DenBaars, Vicinal semipolar iii-nitride substrates to compensate tilt of relaxed hetero-epitaxial layers, 2012.
Singisett, U., M. Hoi Wong, J. S. Speck, and U. K. Mishra, "Vertically scaled 5 nm GaN channel enhancement-mode N-polar GaN MOS-HFET with 560 mS/mm g m and 0.76 Ω-mm R on", Device Research Conference (DRC), 2011 69th Annual: IEEE, pp. 1–2, 2011.
Farzana, E., F. Alema, W. Ying Ho, A. Mauze, T. Itoh, A. Osinsky, and J. S. Speck, "Vertical β-Ga2O3 Schottky diodes from metal-organic chemical vapor deposition with low on-resistance and high average breakdown field", Oxide-based Materials and Devices XII: International Society for Optics and Photonics, 2021.
Browne, D. A., M. N. Fireman, B. Mazumder, L. Y. Kuritzky, Y-R. Wu, and J. S. Speck, "Vertical transport through AlGaN barriers in heterostructures grown by ammonia molecular beam epitaxy and metalorganic chemical vapor deposition", Semiconductor Science and Technology, vol. 32, no. 2: IOP Publishing, pp. 025010, 2017.
Fireman, MN., H. Li, S. Keller, U. K. Mishra, and J. S. Speck, "Vertical transport in isotype InAlN/GaN dipole induced diodes grown by molecular beam epitaxy", Journal of Applied Physics, vol. 121, no. 20: AIP Publishing, pp. 205702, 2017.
Alema, F., B. Hertog, A. V. Osinsky, P. Mukhopadhyay, M. Toporkov, W. V. Schoenfeld, E. Ahmadi, and J. Speck, "Vertical solar blind Schottky photodiode based on homoepitaxial Ga 2 O 3 thin film", Oxide-based Materials and Devices VIII, vol. 10105: International Society for Optics and Photonics, pp. 101051M, 2017.
Farzana, E., S. Roy, N. S. Hendricks, S. Krishnamoorthy, and J. S. Speck, "Vertical PtOx/Pt/Beta-Ga2O3 Schottky diodes with high permittivity dielectric field plate for low leakage and high breakdown voltage", Applied Physics Letters, vol. 123, issue 19, 2023.

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