Vertical transport in isotype InAlN/GaN dipole induced diodes grown by molecular beam epitaxy

TitleVertical transport in isotype InAlN/GaN dipole induced diodes grown by molecular beam epitaxy
Publication TypeJournal Article
Year of Publication2017
AuthorsFireman, MN., H. Li, S. Keller, U. K. Mishra, and J. S. Speck
JournalJournal of Applied Physics
Volume121
Pagination205702