Speck Research Group | UC Santa Barbara

The Speck group works on the relation between epitaxial growth, microstructure, morphology, heterostructures, transport, and device properties in wide bandgap semiconductors.  For nearly 25 years, Speck has lead the materials science studies of GaN-based semiconductors at UCSB.  Over this time, the group has elucidated the fundamental growth mechanisms and extended defect generation in MOCVD, MBE and HVPE growth, established the impact of threading dislocations on growth, morphology, and transport.  Over the past decade, the group has also has had a continued focus on fundamentals of binary oxides including the emerging wide bandgap semiconductor β-Ga2O3.