News

November 27, 2023

Tanay Tak's presentation, titled "Evidence of Lateral Injection at V-Defect Sidewalls in III-Nitride Light Emitting Diodes Using Electron Emission Microscopy" was awarded the Best Student Award at the 14th International Conference on Nitride Semiconductors in Fukuoka, Japan.

September 25, 2023

Tanay Tak has received the 2023 National Defense Science and Engineering Graduate Fellowship! His research focuses on understanding hot electrons to inform the design of next-generation III-Nitride semiconductor devices. 

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July 03, 2020

While medical experts around the world search for a vaccine, researchers at UCSB are examining the potential role ultraviolet light plays in disinfecting various materials from the ruthless coronavirus. 

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June 25, 2020

Materials scientists work on the semiconductors that could transform how we disinfect surfaces, spaces, personal protective equipment — even the air we breathe

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March 12, 2020

University of California Santa Barbara (UCSB) in the USA has been using silicon carbide (SiC) substrates to grow aluminium gallium nitride (AlGaN) structures aimed at 278nm deep ultraviolet (UV-C, 100-280nm wavelength) light-emitting diodes (LEDs) [Burhan K. SaifAddin et al, ACS Photonics, published online 27 January 2020]. The researchers used surface roughening of thin-film flip-chip devices to boost light-extraction efficiency (LEE) by a factor of 3 over smooth-faced LEDs.

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June 04, 2019

CSW2019 is the premier forum for science, technology, and applications in all areas of compound semiconductors.

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July 24, 2018

With the help of DOE funding, researchers at the University of California at Santa Barbara are conducting analyses to determine the mechanisms underlying efficiency loss in light-emitting diodes (LEDs) used in solid-state lighting. The researchers’ efforts focus on understanding the cause of the relatively low efficiency of green LEDs, which is commonly referred to as the “green gap,” as well as of the high-temperature efficiency losses known as “thermal droop.”

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April 23, 2018

Researchers at UC Santa Barbara and Ecole Polytechnique confirm that Auger recombination theory is responsible for LED droop phenomenon

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September 06, 2017

The color of LED lights is controlled by a clumsy process. A new mathematical discovery may make it easier for us to get the hues we want.

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August 30, 2017

A mathematician and her collaborators figured out how to predict electrons’ behavior by studying the mathematics of wave

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December 13, 2016

UC Santa Barbara professors James Speck and Larry Coldren are among the newest fellows of the National Academy of Inventors (NAI).

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June 24, 2014

High-kinetic-energy electrons emitted from an LED clearly indicate that the Auger effect is the dominant cause of efficiency droop.

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February 07, 2012

The startup sees a 75 percent boost in efficiency with its LED bulb, a new material platform for bringing down the cost of LEDs for general lighting

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December 19, 2006

Record performance figures for nonpolar and semipolar LEDs have been reported by researchers at the Solid State Lighting & Display Center (SSLDC) at UC Santa Barbara (UCSB), and the Japan Science & Technology Agency’s Exploratory Research for Advanced Technology program (JST ERATO).

Steve DenBaars, part of the UCSB team that also includes Shuji Nakamura, James Speck and Umesh Mishra, says that the team believe this to be "one of the biggest fundamental breakthrough in GaN emitters in several years."

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