Aluminium gallium nitride on silicon carbide for ultraviolet diodes

March 12, 2020

University of California Santa Barbara (UCSB) in the USA has been using silicon carbide (SiC) substrates to grow aluminium gallium nitride (AlGaN) structures aimed at 278nm deep ultraviolet (UV-C, 100-280nm wavelength) light-emitting diodes (LEDs) [Burhan K. SaifAddin et al, ACS Photonics, published online 27 January 2020]. The researchers used surface roughening of thin-film flip-chip devices to boost light-extraction efficiency (LEE) by a factor of 3 over smooth-faced LEDs.

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