Publications
"Low-efficiency-droop c-plane InGaN/GaN light-emitting diodes through the use of thick single quantum wells and doped barriers", Journal of Applied Physics, vol. 133, 04, 2023.
, "Low-Energy Ion-Induced Single-Event Burnout in Gallium Oxide Schottky Diodes", IEEE Transactions on Nuclear Science, vol. 70, pp. 363-369, 2023.
, "Low Forward Voltage III-Nitride Red Micro-Light-Emitting Diodes on a Strain Relaxed Template with an InGaN Decomposition Layer", Crystals, vol. 12, pp. 721, 2022.
, "Low 10^14 cm−3 free carrier concentration in epitaxial β-Ga2O3 grown by MOCVD", APL Materials, vol. 8, pp. 021110, 2020.
, "Low-temperature carrier transport across InGaN multiple quantum wells: Evidence of ballistic hole transport", Phys. Rev. B, vol. 101, pp. 075305, Feb, 2020.
, "Low temperature electron mobility exceeding 104 cm2/V s in MOCVD grown β-Ga2O3", APL Materials, vol. 7, pp. 121110, 2019.
, "Low threading dislocation density aluminum nitride on silicon carbide through the use of reduced temperature interlayers", Journal of Crystal Growth, vol. 483: North-Holland, pp. 134–139, 2018.
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"Localization landscape theory of disorder in semiconductors. II. Urbach tails of disordered quantum well layers", Physical Review B, vol. 95, no. 14: American Physical Society, pp. 144205, 2017.
, "Localization landscape theory of disorder in semiconductors. III. Application to carrier transport and recombination in light emitting diodes", Physical Review B, vol. 95, no. 14: American Physical Society, pp. 144206, 2017.
, "Lighting for the 21st century with laser diodes based on non-basal plane orientations of GaN", MRS Communications, vol. 5, no. 3: Cambridge University Press, pp. 463–473, 2015.
, "Low damage dry etch for III-nitride light emitters", Semiconductor Science and Technology, vol. 30, no. 8: IOP Publishing, pp. 085019, 2015.
, "Low modulation bias InGaN-based integrated EA-modulator-laser on semipolar GaN substrate", Photonics Conference (IPC), 2015: IEEE, pp. 581–582, 2015.
, "Low-energy electro-and photo-emission spectroscopy of GaN materials and devices", Journal of Applied Physics, vol. 117, no. 11: AIP Publishing, pp. 112814, 2015.
, "Let There Be LightóWith Gallium Nitride: The 2014 Nobel Prize in Physics", Angewandte Chemie International Edition, vol. 53, no. 51: Wiley Online Library, pp. 13978–13980, 2014.
, Light emitting device for AC power operation, oct # " 21", 2014.
, , "Low ON-resistance and high current GaN vertical electron transistors with buried p-GaN layers", Device Research Conference (DRC), 2014 72nd Annual: IEEE, pp. 253–254, 2014.
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Lateral growth method for defect reduction of semipolar nitride films, apr # " 3", 2012.
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