Low temperature electron mobility exceeding 104 cm2/V s in MOCVD grown β-Ga2O3

TitleLow temperature electron mobility exceeding 104 cm2/V s in MOCVD grown β-Ga2O3
Publication TypeJournal Article
Year of Publication2019
AuthorsAlema, F., Y. Zhang, A. Osinsky, N. Valente, A. Mauze, T. Itoh, and J. S. Speck
JournalAPL Materials
Volume7
Pagination121110
URLhttps://doi.org/10.1063/1.5132954
DOI10.1063/1.5132954