Publications

Found 28 results
Author Title Type [ Year(Asc)]
Filters: Author is Speck,James S.  [Clear All Filters]
2020
Lheureux, G., C. Lynsky, Y-R. Wu, J. S. Speck, and C. Weisbuch, "A 3D simulation comparison of carrier transport in green and blue c-plane multi-quantum well nitride light emitting diodes", Journal of Applied Physics, vol. 128, pp. 235703, 2020.
Smith, J. M., R. Ley, M. S. Wong, Y. Hyun Baek, J. Hun Kang, C. Hon Kim, M. J. Gordon, S. Nakamura, J. S. Speck, and S. P. DenBaars, "Comparison of size-dependent characteristics of blue and green InGaN microLEDs down to 1 μm in diameter", Applied Physics Letters, vol. 116, pp. 071102, 2020.
Itoh, T., A. Mauze, Y. Zhang, and J. S. Speck, "Epitaxial growth of β-Ga2O3 on (110) substrate by plasma-assisted molecular beam epitaxy", Applied Physics Letters, vol. 117, pp. 152105, 2020.
Alema, F., Y. Zhang, A. Mauze, T. Itoh, J. S. Speck, B. Hertog, and A. Osinsky, "H2O vapor assisted growth of β-Ga2O3 by MOCVD", AIP Advances, vol. 10, pp. 085002, 2020.
Alema, F., Y. Zhang, A. Osinsky, N. Orishchin, N. Valente, A. Mauze, and J. S. Speck, "Low 10^14  cm−3 free carrier concentration in epitaxial β-Ga2O3 grown by MOCVD", APL Materials, vol. 8, pp. 021110, 2020.
Mauze, A., Y. Zhang, T. Itoh, F. Wu, and J. S. Speck, "Metal oxide catalyzed epitaxy (MOCATAXY) of β-Ga2O3 films in various orientations grown by plasma-assisted molecular beam epitaxy", APL Materials, vol. 8, pp. 021104, 2020.
Yuan, C., Y. Zhang, R. Montgomery, S. Kim, J. Shi, A. Mauze, T. Itoh, J. S. Speck, and S. Graham, "Modeling and analysis for thermal management in gallium oxide field-effect transistors", Journal of Applied Physics, vol. 127, pp. 154502, 2020.
Monavarian, M., J. Xu, M. N. Fireman, N. Nookala, F. Wu, B. Bonef, K. S. Qwah, E. C. Young, M. A. Belkin, and J. S. Speck, "Structural and optical properties of nonpolar m- and a-plane GaN/AlGaN heterostructures for narrow-linewidth mid-infrared intersubband transitions", Applied Physics Letters, vol. 116, pp. 201103, 2020.
Marcinkevičius, S., and J. S. Speck, "Ultrafast dynamics of hole self-localization in β-Ga2O3", Applied Physics Letters, vol. 116, pp. 132101, 2020.
Yapparov, R., Y. Chao Chow, C. Lynsky, F. Wu, S. Nakamura, J. S. Speck, and S. Marcinkevičius, "Variations of light emission and carrier dynamics around V-defects in InGaN quantum wells", Journal of Applied Physics, vol. 128, pp. 225703, 2020.
2019
Zhang, Y., A. Mauze, and J. S. Speck, "Anisotropic etching of β-Ga2O3 using hot phosphoric acid", Applied Physics Letters, vol. 115, pp. 013501, 2019.
Feneberg, M., C. Lidig, M. E. White, M. Y. Tsai, J. S. Speck, O. Bierwagen, Z. Galazka, and R. Goldhahn, "Anisotropic optical properties of highly doped rutile SnO2: Valence band contributions to the Burstein-Moss shift", APL Materials, vol. 7, pp. 022508, 2019.
Cramer, R. C., E. C. H. Kyle, and J. S. Speck, "Band gap bowing for high In content InAlN films", Journal of Applied Physics, vol. 126, pp. 035703, 2019.
Cramer, R. C., J. English, B. Bonef, and J. S. Speck, "BBr3 as a boron source in plasma-assisted molecular beam epitaxy", Journal of Vacuum Science & Technology A, vol. 37, pp. 061502, 2019.
Sayed, I., B. Bonef, W. Liu, S. Chan, J. Georgieva, J. S. Speck, S. Keller, and U. K. Mishra, "Electrical properties and interface abruptness of AlSiO gate dielectric grown on 0001 ¯ N-polar and (0001) Ga-polar GaN", Applied Physics Letters, vol. 115, pp. 172104, 2019.
Espenlaub, A. C., D. J. Myers, E. C. Young, S. Marcinkevičius, C. Weisbuch, and J. S. Speck, "Evidence of trap-assisted Auger recombination in low radiative efficiency MBE-grown III-nitride LEDs", Journal of Applied Physics, vol. 126, pp. 184502, 2019.
Farzana, E., A. Mauze, J. B. Varley, T. E. Blue, J. S. Speck, A. R. Arehart, and S. A. Ringel, "Influence of neutron irradiation on deep levels in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy", APL Materials, vol. 7, pp. 121102, 2019.
Mauze, A., Y. Zhang, T. Mates, F. Wu, and J. S. Speck, "Investigation of unintentional Fe incorporation in (010) β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy", Applied Physics Letters, vol. 115, pp. 052102, 2019.
Alema, F., Y. Zhang, A. Osinsky, N. Valente, A. Mauze, T. Itoh, and J. S. Speck, "Low temperature electron mobility exceeding 104 cm2/V s in MOCVD grown β-Ga2O3", APL Materials, vol. 7, pp. 121110, 2019.
Zhang, Y., F. Alema, A. Mauze, O. S. Koksaldi, R. Miller, A. Osinsky, and J. S. Speck, "MOCVD grown epitaxial β-Ga2O3 thin film with an electron mobility of 176 cm2/V s at room temperature", APL Materials, vol. 7, pp. 022506, 2019.
Baj, M., L. H. Dmowski, A. Kwiatkowski, J. Przybytek, X. Wang, G. Koblmüller, C. S. Gallinat, and J. S. Speck, "Puzzle of non-surface related 2D electron gas in n-InN epitaxial samples", Journal of Applied Physics, vol. 126, pp. 045705, 2019.
Zollner, C. J., A. Almogbel, Y. Yao, B. K. SaifAddin, F. Wu, M. Iza, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Reduced dislocation density and residual tension in AlN grown on SiC by metalorganic chemical vapor deposition", Applied Physics Letters, vol. 115, pp. 161101, 2019.
Alema, F., B. Hertog, P. Mukhopadhyay, Y. Zhang, A. Mauze, A. Osinsky, W. V. Schoenfeld, J. S. Speck, and T. Vogt, "Solar blind Schottky photodiode based on an MOCVD-grown homoepitaxial β-Ga2O3 thin film", APL Materials, vol. 7, pp. 022527, 2019.
2018
Farzana, E., H. M. Foronda, C. M. Jackson, T. Razzak, Z. Zhang, J. S. Speck, A. R. Arehart, and S. A. Ringel, "Characterization of traps in InAlN by optically and thermally stimulated deep level defect spectroscopies", Journal of Applied Physics, vol. 124, pp. 145703, 2018.
Neal, A. T., S. Mou, S. Rafique, H. Zhao, E. Ahmadi, J. S. Speck, K. T. Stevens, J. D. Blevins, D. B. Thomson, N. Moser, et al., "Donors and deep acceptors in β-Ga2O3", Applied Physics Letters, vol. 113, pp. 062101, 2018.

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