Low 10^14  cm−3 free carrier concentration in epitaxial β-Ga2O3 grown by MOCVD

TitleLow 10^14  cm−3 free carrier concentration in epitaxial β-Ga2O3 grown by MOCVD
Publication TypeJournal Article
Year of Publication2020
AuthorsAlema, F., Y. Zhang, A. Osinsky, N. Orishchin, N. Valente, A. Mauze, and J. S. Speck
JournalAPL Materials
Volume8
Pagination021110
URLhttps://doi.org/10.1063/1.5132752
DOI10.1063/1.5132752