Publications

Found 6 results
Author Title Type [ Year(Asc)]
Filters: Author is Itoh,Takeki  [Clear All Filters]
2021
Montgomery, R. H., Y. Zhang, C. Yuan, S. Kim, J. Shi, T. Itoh, A. Mauze, S. Kumar, J. Speck, and S. Graham, "Thermal management strategies for gallium oxide vertical trench-fin MOSFETs", Journal of Applied Physics, vol. 129, pp. 085301, 2021.
2020
Itoh, T., A. Mauze, Y. Zhang, and J. S. Speck, "Epitaxial growth of β-Ga2O3 on (110) substrate by plasma-assisted molecular beam epitaxy", Applied Physics Letters, vol. 117, pp. 152105, 2020.
Alema, F., Y. Zhang, A. Mauze, T. Itoh, J. S. Speck, B. Hertog, and A. Osinsky, "H2O vapor assisted growth of β-Ga2O3 by MOCVD", AIP Advances, vol. 10, pp. 085002, 2020.
Mauze, A., Y. Zhang, T. Itoh, F. Wu, and J. S. Speck, "Metal oxide catalyzed epitaxy (MOCATAXY) of β-Ga2O3 films in various orientations grown by plasma-assisted molecular beam epitaxy", APL Materials, vol. 8, pp. 021104, 2020.
Yuan, C., Y. Zhang, R. Montgomery, S. Kim, J. Shi, A. Mauze, T. Itoh, J. S. Speck, and S. Graham, "Modeling and analysis for thermal management in gallium oxide field-effect transistors", Journal of Applied Physics, vol. 127, pp. 154502, 2020.
2019
Alema, F., Y. Zhang, A. Osinsky, N. Valente, A. Mauze, T. Itoh, and J. S. Speck, "Low temperature electron mobility exceeding 104 cm2/V s in MOCVD grown β-Ga2O3", APL Materials, vol. 7, pp. 121110, 2019.