Influence of neutron irradiation on deep levels in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy

TitleInfluence of neutron irradiation on deep levels in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy
Publication TypeJournal Article
Year of Publication2019
AuthorsFarzana, E., A. Mauze, J. B. Varley, T. E. Blue, J. S. Speck, A. R. Arehart, and S. A. Ringel
JournalAPL Materials
Volume7
Pagination121102
URLhttps://doi.org/10.1063/1.5126463
DOI10.1063/1.5126463