| Title | Electrical properties and interface abruptness of AlSiO gate dielectric grown on 0001 ¯ N-polar and (0001) Ga-polar GaN |
| Publication Type | Journal Article |
| Year of Publication | 2019 |
| Authors | Sayed, I., B. Bonef, W. Liu, S. Chan, J. Georgieva, J. S. Speck, S. Keller, and U. K. Mishra |
| Journal | Applied Physics Letters |
| Volume | 115 |
| Pagination | 172104 |
| URL | https://doi.org/10.1063/1.5125788 |
| DOI | 10.1063/1.5125788 |