Reduced dislocation density and residual tension in AlN grown on SiC by metalorganic chemical vapor deposition

TitleReduced dislocation density and residual tension in AlN grown on SiC by metalorganic chemical vapor deposition
Publication TypeJournal Article
Year of Publication2019
AuthorsZollner, C. J., A. Almogbel, Y. Yao, B. K. SaifAddin, F. Wu, M. Iza, S. P. DenBaars, J. S. Speck, and S. Nakamura
JournalApplied Physics Letters
Volume115
Pagination161101
URLhttps://doi.org/10.1063/1.5123623
DOI10.1063/1.5123623