Publications
"Vertical metal-dielectric-semiconductor diode on (001) Beta-Ga2O3 with high-k TiO2 interlayer exhibiting reduced turn-on voltage and leakage current and improved breakdown", Applied Physics Express, vol. 16, issue 7, 2023.
, "Vertical PtOx/Pt/Beta-Ga2O3 Schottky diodes with high permittivity dielectric field plate for low leakage and high breakdown voltage", Applied Physics Letters, vol. 123, issue 19, 2023.
, "Vertical hole transport through unipolar InGaN quantum wells and double heterostructures", Phys. Rev. Mater., vol. 6, pp. 044602, Apr, 2022.
, "Vertical β-Ga2O3 Schottky diodes from metal-organic chemical vapor deposition with low on-resistance and high average breakdown field", Oxide-based Materials and Devices XII: International Society for Optics and Photonics, 2021.
, "Variations of light emission and carrier dynamics around V-defects in InGaN quantum wells", Journal of Applied Physics, vol. 128, pp. 225703, 2020.
, "VUV Frequency Comb by Cavity-Enhanced High Harmonic Generation on Solid Surfaces", Laser Congress 2019 (ASSL, LAC, LS&C): Optical Society of America, 2019.
, "Vertical solar blind Schottky photodiode based on homoepitaxial Ga 2 O 3 thin film", Oxide-based Materials and Devices VIII, vol. 10105: International Society for Optics and Photonics, pp. 101051M, 2017.
, "Vertical transport in isotype InAlN/GaN dipole induced diodes grown by molecular beam epitaxy", Journal of Applied Physics, vol. 121, no. 20: AIP Publishing, pp. 205702, 2017.
, "Vertical transport through AlGaN barriers in heterostructures grown by ammonia molecular beam epitaxy and metalorganic chemical vapor deposition", Semiconductor Science and Technology, vol. 32, no. 2: IOP Publishing, pp. 025010, 2017.
, "Vacancy complexes in Sb-doped SnO 2", AIP Conference Proceedings, vol. 1583, no. 1: AIP, pp. 368–371, 2014.
, "Vacancy defect formation in PA-MBE grown C-doped InN", physica status solidi (c), vol. 11, no. 3-4: Wiley Online Library, pp. 530–532, 2014.
, "Valence band states and polarized optical emission from nonpolar and semipolar III–nitride quantum well optoelectronic devices", Japanese Journal of Applied Physics, vol. 53, no. 10: IOP Publishing, pp. 100206, 2014.
, "Valence-band density of states and surface electron accumulation in epitaxial SnO 2 films", Physical Review B, vol. 90, no. 15: American Physical Society, pp. 155413, 2014.
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"Vertically scaled 5 nm GaN channel enhancement-mode N-polar GaN MOS-HFET with 560 mS/mm g m and 0.76 Ω-mm R on", Device Research Conference (DRC), 2011 69th Annual: IEEE, pp. 1–2, 2011.
, "Vacancy defects probed with positron annihilation spectroscopy in In-polar InN grown by plasma-assisted molecular beam epitaxy: Effects of growth conditions", physica status solidi (c), vol. 6, no. S2: WILEY-VCH Verlag, 2009.
, "Vacancy-oxygen complexes and their optical properties in AlN epitaxial films studied by positron annihilation", Journal of Applied Physics, vol. 105, no. 5: AIP, pp. 054501, 2009.
, "Vertical defects in heavily Mg-doped Al0. 69Ga0. 31N", physica status solidi (a), vol. 204, no. 10: Wiley Online Library, pp. 3423–3428, 2007.
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