Vertical β-Ga2O3 Schottky diodes from metal-organic chemical vapor deposition with low on-resistance and high average breakdown field

TitleVertical β-Ga2O3 Schottky diodes from metal-organic chemical vapor deposition with low on-resistance and high average breakdown field
Publication TypeConference Paper
Year of Publication2021
AuthorsFarzana, E., F. Alema, W. Ying Ho, A. Mauze, T. Itoh, A. Osinsky, and J. S. Speck
EditorRogers, D. J., D. C. Look, and F. H. Teherani
Conference NameOxide-based Materials and Devices XII
PublisherInternational Society for Optics and Photonics
KeywordsBreakdown, Field Management, Ga2O3, MOCVD, On-resistance, Power electronics, Punch-through, Vertical Schottky Diode
URLhttps://doi.org/10.1117/12.2591768
DOI10.1117/12.2591768