Vertical metal-dielectric-semiconductor diode on (001) Beta-Ga2O3 with high-k TiO2 interlayer exhibiting reduced turn-on voltage and leakage current and improved breakdown

TitleVertical metal-dielectric-semiconductor diode on (001) Beta-Ga2O3 with high-k TiO2 interlayer exhibiting reduced turn-on voltage and leakage current and improved breakdown
Publication TypeJournal Article
Year of Publication2023
AuthorsHendricks, N. S., E. Farzana, A. E. Islam, K. D. Leedy, K. J. Liddy, J. Williams, D. M. Dryden, A. M. Adams, J. S. Speck, K. D. Chabak, and A. J. Green
JournalApplied Physics Express
Volume16
Start Page071002
Issue7