| Title | Vertically scaled 5 nm GaN channel enhancement-mode N-polar GaN MOS-HFET with 560 mS/mm g m and 0.76 Ω-mm R on |
| Publication Type | Conference Paper |
| Year of Publication | 2011 |
| Authors | Singisett, U., M. Hoi Wong, J. S. Speck, and U. K. Mishra |
| Conference Name | Device Research Conference (DRC), 2011 69th Annual |
| Publisher | IEEE |