Publications

Found 14 results
Author Title Type [ Year(Asc)]
Filters: First Letter Of Title is U  [Clear All Filters]
2022
Marcinkevičius, S., and J. S. Speck, "Ultrafast carrier dynamics in β-Ga2O3", Oxide-based Materials and Devices XIII: International Society for Optics and Photonics, 2022.
2020
Marcinkevičius, S., and J. S. Speck, "Ultrafast dynamics of hole self-localization in β-Ga2O3", Applied Physics Letters, vol. 116, pp. 132101, 2020.
2017
Kowsz, S. J., E. C. Young, B. P. Yonkee, C. D. Pynn, R. M. Farrell, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Using tunnel junctions to grow monolithically integrated optically pumped semipolar III-nitride yellow quantum wells on top of electrically injected blue quantum wells", Optics express, vol. 25, no. 4: Optical Society of America, pp. 3841–3849, 2017.
2015
Young, E. C., B. P. Yonkee, F. Wu, B. K. Saifaddin, D. A. Cohen, S. P. DenBaars, S. Nakamura, and J. S. Speck, "Ultraviolet light emitting diodes by ammonia molecular beam epitaxy on metamorphic () AlGaN/GaN buffer layers", Journal of Crystal Growth, vol. 425: North-Holland, pp. 389–392, 2015.
Young, E. C., B. P. Yonkee, F. Wu, B. K. Saifaddin, D. A. Cohen, S. P. DenBaars, S. Nakamura, and J. S. Speck, "Ultraviolet light emitting diodes by ammonia molecular beam epitaxy on metamorphic (202¯ 1) AlGaN/GaN buffer layers", Journal of Crystal Growth: Elsevier BV, 2015.
Speck, J., "Unraveling the Efficiency Limits of GaN-Based Emitters and the Surprising Connection to Electron Devices", Meeting Abstracts, no. 23: The Electrochemical Society, pp. 1449–1449, 2015.
2013
Pimputkar, S., P. M. Von Dollen, J. S. Speck, and S. Nakamura, Use of alkaline-earth metals to reduce impurity incorporation into a group-iii nitride crystal grown using the ammonothermal method, apr # " 25", 2013.
Pimputkar, S., D. S. Kamber, J. S. Speck, and S. Nakamura, Using boron-containing compounds, gasses and fluids during ammonothermal growth of group-III nitride crystals, 2013.
Pimputkar, S., D. S. Kamber, J. S. Speck, and S. Nakamura, Using boron-containing compounds, gasses and fluids during ammonothermal growth of group-iii nitride crystals, 2013.
2010
Dasgupta, S., Nidhi, D. F. Brown, F. Wu, S. Keller, J. S. Speck, and U. K. Mishra, "Ultralow nonalloyed ohmic contact resistance to self aligned N-polar GaN high electron mobility transistors by In (Ga) N regrowth", Applied physics letters, vol. 96, no. 14: AIP, pp. 143504, 2010.
Dasgupta, S., DF. Nidhi, TE. Mates, S. Keller, JS. Speck, and UK. Mishra, "Ultra-low ohmic contacts to N-polar GaN HEMTs by In (Ga) N based source-drain regrowth by Plasma MBE", Proceedings of CS MANTECH Conference. Oregon, USA, pp. 111–114, 2010.
2009
Shen, H., M. Wraback, H. Zhong, A. Tyagi, SP. DenBaars, S. Nakamura, and JS. Speck, "Unambiguous evidence of the existence of polarization field crossover in a semipolar InGaN/GaN single quantum well", Applied Physics Letters, vol. 95, no. 3: AIP, pp. 033503, 2009.
2006
Shen, L., T. Palacios, C. Poblenz, A. Corrion, A. Chakraborty, N. Fichtenbaum, S. Keller, SP. DenBaars, JS. Speck, and UK. Mishra, "Unpassivated high power deeply recessed GaN HEMTs with fluorine-plasma surface treatment", IEEE Electron Device Letters, vol. 27, no. 4: IEEE, pp. 214–216, 2006.
2005
Poblenz, C., P. Waltereit, and JS. Speck, "Uniformity and control of surface morphology during growth of GaN by molecular beam epitaxy", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 23, no. 4: AVS, pp. 1379–1385, 2005.