Title | Ultralow nonalloyed ohmic contact resistance to self aligned N-polar GaN high electron mobility transistors by In (Ga) N regrowth |
Publication Type | Journal Article |
Year of Publication | 2010 |
Authors | Dasgupta, S., Nidhi, D. F. Brown, F. Wu, S. Keller, J. S. Speck, and U. K. Mishra |
Journal | Applied physics letters |
Volume | 96 |
Pagination | 143504 |