Ultralow nonalloyed ohmic contact resistance to self aligned N-polar GaN high electron mobility transistors by In (Ga) N regrowth

TitleUltralow nonalloyed ohmic contact resistance to self aligned N-polar GaN high electron mobility transistors by In (Ga) N regrowth
Publication TypeJournal Article
Year of Publication2010
AuthorsDasgupta, S., Nidhi, D. F. Brown, F. Wu, S. Keller, J. S. Speck, and U. K. Mishra
JournalApplied physics letters
Volume96
Pagination143504