Unpassivated high power deeply recessed GaN HEMTs with fluorine-plasma surface treatment

TitleUnpassivated high power deeply recessed GaN HEMTs with fluorine-plasma surface treatment
Publication TypeJournal Article
Year of Publication2006
AuthorsShen, L., T. Palacios, C. Poblenz, A. Corrion, A. Chakraborty, N. Fichtenbaum, S. Keller, SP. DenBaars, JS. Speck, and UK. Mishra
JournalIEEE Electron Device Letters
Volume27
Pagination214–216