Publications
] , "Recovering the efficiency of AlGaInP red micro-LEDs using sidewall treatments", Applied Physics Express, vol. 16, issue 6, 2023.
, "Red InGaN micro-light-emitting diodes (\>620 nm) with a peak external quantum efficiency of 4.5\% using an epitaxial tunnel junction contact", Applied Physics Letters, vol. 120, 03, 2022.
, "Role of defects in ultra-high gain in fast planar tin gallium oxide UV-C photodetector by MBE", Applied Physics Letters, vol. 121, 09, 2022.
, "Reduction of efficiency droop in c-plane InGaN/GaN light-emitting diodes using a thick single quantum well with doped barriers", Applied Physics Letters, vol. 119, 11, 2021.
, "Role of V-defect density on the performance of III-nitride green LEDs on sapphire substrates", Journal of Crystal Growth, vol. 560-561, pp. 126048, 2021.
, "Room-Temperature Continuous-Wave Electrically Driven Semipolar (202̅1) Blue Laser Diodes Heteroepitaxially Grown on a Sapphire Substrate", ACS Photonics, vol. 7, pp. 1662-1666, 2020.
, "Realization of thin-film m-plane InGaN laser diode fabricated by epitaxial lateral overgrowth and mechanical separation from a reusable growth substrate", Opt. Express, vol. 27, pp. 24717–24723, Aug, 2019.
, "Recent progress in AlGaN UV-C LEDs grown on SiC", 2019 Compound Semiconductor Week (CSW), May, 2019.
, "Reduced dislocation density and residual tension in AlN grown on SiC by metalorganic chemical vapor deposition", Applied Physics Letters, vol. 115, pp. 161101, 2019.
, "Reduced-droop green III–nitride light-emitting diodes utilizing GaN tunnel junction", Applied Physics Express, vol. 11, no. 4: IOP Publishing, pp. 042101, 2018.
, "Revisiting the origin of satellites in core-level photoemission of transparent conducting oxides: The case of n-doped SnO 2", Physical Review B, vol. 97, no. 15: American Physical Society, pp. 155102, 2018.
, "Reconstructing APT Datasets: Challenging the Limits of the Possible", Microscopy and Microanalysis, vol. 23, no. S1: Cambridge University Press, pp. 640–641, 2017.
, "Recent and forthcoming publications in pss", Phys. Status Solidi A, vol. 212, no. 4, pp. 713, 2015.
, "Relaxed c-plane InGaN layers for the growth of strain-reduced InGaN quantum wells", Semiconductor Science and Technology, vol. 30, no. 10: IOP Publishing, pp. 105015, 2015.
, Reactor designs for use in ammonothermal growth of group-III nitride crystals, feb # " 4", 2014.
, "Recent progress in metal-organic chemical vapor deposition of N-polar group-III nitrides", Semiconductor Science and Technology, vol. 29, no. 11: IOP Publishing, pp. 113001, 2014.
, "RF performance of proton-irradiated AlGaN/GaN HEMTs", IEEE Transactions on Nuclear Science, vol. 61, no. 6: IEEE, pp. 2959–2964, 2014.
, "Reduction of carbon proximity effects by including AlGaN back barriers in HEMTs on free-standing GaN", Electronics Letters, vol. 49, no. 14: IET Digital Library, pp. 893–895, 2013.
, "Reduction in thermal droop using thick single-quantum-well structure in semipolar (2021) blue light-emitting diodes", Applied Physics Express, vol. 5, no. 10: IOP Publishing, pp. 102103, 2012.
, "The reduction of efficiency droop by Al0. 82In0. 18N/GaN superlattice electron blocking layer in (0001) oriented GaN-based light emitting diodes", Applied Physics Letters, vol. 101, no. 13: AIP, pp. 131113, 2012.
, "Recent progress in InGaN-based laser diodes fabricated on nonpolar/semipolar substrates", Photonics Conference (PHO), 2011 IEEE: IEEE, pp. 503–504, 2011.
, "Role of oxygen in the OFF-state degradation of AlGaN/GaN high electron mobility transistors", Applied Physics Letters, vol. 99, no. 22: AIP, pp. 223506, 2011.
, "Room temperature operation and DC characteristics of InAlN/GaN/AlGaN Hot Electron Transistors with common base transfer ratio, α= 0.97", Device Research Conference (DRC), 2010: IEEE, pp. 133–134, 2010.