| Title | Recent progress in AlGaN UV-C LEDs grown on SiC |
| Publication Type | Conference Paper |
| Year of Publication | 2019 |
| Authors | Almogbel, A., B. SaifAddin, C. Zollner, M. Iza, H. Albrithen, A. Alyamani, A. Albadri, S. Nakamura, S. Denbaars, and J. Speck |
| Conference Name | 2019 Compound Semiconductor Week (CSW) |
| Date Published | May |
| Keywords | AlGaN, aluminium compounds, buffer layers, efficient UV-C LEDs, free electron concentration, gallium compounds, Hall effect, high output power, high power, high quality AlGaN, III-V semiconductors, light emitting diodes, low doping efficiency, low surface mobility, MOCVD, MOCVD growth, ohmic contact, ohmic contacts, output power, semiconductor doping, semiconductor growth, SiC, TEM, thin-film flip-chip devices, vanadium-based metal stack, wavelength 262.0 nm, wide band gap semiconductors |
| DOI | 10.1109/ICIPRM.2019.8819163 |
