| Title | Room temperature operation and DC characteristics of InAlN/GaN/AlGaN Hot Electron Transistors with common base transfer ratio, α= 0.97 |
| Publication Type | Conference Paper |
| Year of Publication | 2010 |
| Authors | Dasgupta, S., A. Raman, JS. Speck, U. K. Mishra, and others |
| Conference Name | Device Research Conference (DRC), 2010 |
| Publisher | IEEE |