Realization of thin-film m-plane InGaN laser diode fabricated by epitaxial lateral overgrowth and mechanical separation from a reusable growth substrate

TitleRealization of thin-film m-plane InGaN laser diode fabricated by epitaxial lateral overgrowth and mechanical separation from a reusable growth substrate
Publication TypeJournal Article
Year of Publication2019
AuthorsKamikawa, T., S. Gandrothula, M. Araki, H. Li, V. Bonito Oliva, F. Wu, D. Cohen, J. S. Speck, S. P. DenBaars, and S. Nakamura
JournalOpt. Express
Volume27
Pagination24717–24723
Date PublishedAug
KeywordsDiode lasers, Emission, Laser materials processing, Multiple quantum wells, Scanning electron microscopy, Vertical cavity surface emitting lasers
Abstract

A nonpolar edge emitting thin film InGaN laser diode has been separated from its native substrate by mechanical tearing with adhesive tape, combining the benefits of Epitaxial Lateral Overgrowth (ELO) and cleavability of nonpolar GaN crystal. The essence of ELO is mainly to weakening strength between native substrate and the fabricated laser device on top of it. We report a 3 mm long laser bar removed from its native GaN substrate. We confirmed edge emitting lasing operation after cleaving facets on a separated thin bar. Threshold current density of the laser was measured to be as low as 2.15 kA/cm2.

URLhttp://www.opticsexpress.org/abstract.cfm?URI=oe-27-17-24717
DOI10.1364/OE.27.024717