Publications
] , "Carrier Diffusion in long wavelength InGaN quantum well LEDs after injection through V-defects", Applied Physics Letters, vol. 125, issue 3, 07/2024.
, "Dislocation half-loop control for optimal V-defect density in GaN-based light emitting diodes", Applied Physics Letters, vol. 125, issue 4, 07/2024.
, "Dynamics of carrier injection through V-defects in long wavelength GaN LEDs", Applied Physics Letters, vol. 124, issue 18, 04/2024.
, "Planarization of p-GaN surfaces on MOCVD grown V-defect engineered GaN-based LEDs", Applied Physics Letters, vol. 124, issue 17, 04/2024.
, "Pure edge-dislocation half-loops in low-temperature GaN for V-defect formation", Physical Review Applied, vol. 21, issue 6, 06/2024.
, "10.6% external quantum efficiency germicidal UV-LEDs grown on thin highly conductive n-AlGaN", Applied Physics Letters, vol. 123, issue 23, 2023.
, "6.5% external quantum efficiency in V-defect engineered red InGaN LEDs", Gallium Nitride Materials and Devices XVIII: International Society for Optics and Photonics, 2023.
, "Atomic layer etching (ALE) of III-nitrides", Applied Physics Letters, vol. 123, issue 6, 2023.
, "Experimental evidence of hole injection through V-defects in long wavelength GaN-based LEDs", Applied Physics Letters, vol. 123, issue 20, 2023.
, "First Demonstration of an N-Polar InAlGaN/GaN HEMT", IEEE Electron Device Letters, vol. 45, issue 3, pp. 328-331, 2023.
, "High external quantum efficiency (6.5%) InGaN V-defect LEDs to 600 nm and patterned sapphire substrates", Optics Express, vol. 31, issue 25, pp. 41351-41360, 2023.
, "Injection mechanisms in a III-nitride light-emitting diode as seen by self-emissive electron microscopy", Physical Review Applied, vol. 20, issue 6, 2023.
, "Origins of the high-energy electroluminescence peaks in long-wavelength (~ 495-685 nm) InGaN light-emitting diodes", Applied Physics Letters, vol. 123, issue 9, 2023.
, "Structure of V-defects in long wavelength GaN-based light emitting diodes", Journal of Applied Physics, vol. 133, 01/2023.
, "New fabrication method of InGaN laser diode by epitaxial lateral overgrowth and cleavable technique from free-standing non- and semi-polar GaN substrate", Gallium Nitride Materials and Devices XVI: International Society for Optics and Photonics, 2021.
, "560 nm InGaN micro-LEDs on low-defect-density and scalable (202̅1) semipolar GaN on patterned sapphire substrates", Opt. Express, vol. 28, pp. 18150–18159, Jun, 2020.
, "Growth of high-quality N-polar GaN on bulk GaN by plasma-assisted molecular beam epitaxy", Solid State Communications, vol. 305, pp. 113763, 2020.
, "Quantitative investigation of indium distribution in InN wetting layers and dots grown by metalorganic chemical vapor deposition", Applied Physics Express, vol. 13, pp. 065005, may, 2020.
, "High germanium doping of GaN films by ammonia molecular beam epitaxy", Journal of Crystal Growth, vol. 508, pp. 19 - 23, 2019.
, "Impact of roughening density on the light extraction efficiency of thin-film flip-chip ultraviolet LEDs grown on SiC", Opt. Express, vol. 27, pp. A1074–A1083, Aug, 2019.
, "Realization of thin-film m-plane InGaN laser diode fabricated by epitaxial lateral overgrowth and mechanical separation from a reusable growth substrate", Opt. Express, vol. 27, pp. 24717–24723, Aug, 2019.
, "Metal-oxide catalyzed epitaxy (MOCATAXY): the example of the O plasma-assisted molecular beam epitaxy of β-(Al x Ga 1− x ) 2 O 3 /β-Ga 2 O 3 heterostructures", Applied Physics Express, vol. 11, pp. 115503, 2018.
, "Atomic-scale nanofacet structure in semipolar (202̄1̄) and (202̄1) InGaN single quantum wells", Applied Physics Express, vol. 7, 2, 2014.
, "Green semipolar (202̄1̄) InGaN light-emitting diodes with small wavelength shift and narrow spectral linewidth", Applied Physics Express, vol. 6, 6, 2013.
, "High Quality InGaN/AlGaN Multiple Quantum Wells for Semipolar InGaN Green Laser Diodes", Applied Physics Express, vol. 3, pp. 082001, 2010.