6.5% external quantum efficiency in V-defect engineered red InGaN LEDs

Title6.5% external quantum efficiency in V-defect engineered red InGaN LEDs
Publication TypeConference Paper
Year of Publication2023
AuthorsEwing, J., C. Lynsky, F. Wu, M. Wong, M. Iza, J. S. Speck, and S. P. DenBaars
EditorFujioka, H., H. Morkoç, and U. T. Schwarz
Conference NameGallium Nitride Materials and Devices XVIII
PublisherInternational Society for Optics and Photonics
KeywordsInGaN red LEDs, Superlattice, V-defects, µLEDs
URLhttps://doi.org/10.1117/12.2649296
DOI10.1117/12.2649296