Publications

Found 5 results
Author Title Type [ Year(Asc)]
Filters: Author is Jacob Ewing  [Clear All Filters]
2024
Yapparov, R., T. Tak, J. Ewing, F. Wu, S. Nakamura, S. P. DenBaars, J. S. Speck, and S. Marcinkevičius, "Carrier Diffusion in long wavelength InGaN quantum well LEDs after injection through V-defects", Applied Physics Letters, vol. 125, issue 3, 07/2024.
2023
Ewing, J., C. Lynsky, F. Wu, M. Wong, M. Iza, J. S. Speck, and S. P. DenBaars, "6.5% external quantum efficiency in V-defect engineered red InGaN LEDs", Gallium Nitride Materials and Devices XVIII: International Society for Optics and Photonics, 2023.
Marcinkevičius, S., J. Ewing, R. Yapparov, F. Wu, S. Nakamura, and J. S. Speck, "Experimental evidence of hole injection through V-defects in long wavelength GaN-based LEDs", Applied Physics Letters, vol. 123, issue 20, 2023.
Chow, Y. Chao, T. Tak, F. Wu, J. Ewing, S. Nakamura, S. P. DenBaars, Y. Ren Wu, C. Weisbuch, and J. S. Speck, "Origins of the high-energy electroluminescence peaks in long-wavelength (~ 495-685 nm) InGaN light-emitting diodes", Applied Physics Letters, vol. 123, issue 9, 2023.
Wu, F., J. Ewing, C. Lynsky, M. Iza, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Structure of V-defects in long wavelength GaN-based light emitting diodes", Journal of Applied Physics, vol. 133, 01/2023.