Publications

Found 57 results
Author Title Type [ Year(Asc)]
Filters: Author is Shuji Nakamura  [Clear All Filters]
2023
Wang, M., F. Wu, Y. Yao, C. Zollner, M. Iza, M. Lam, S. P. DenBaars, S. Nakamura, and J. S. Speck, "10.6% external quantum efficiency germicidal UV-LEDs grown on thin highly conductive n-AlGaN", Applied Physics Letters, vol. 123, issue 23, 2023.
Ho, W. Ying, Y. Chao Chow, Z. Biegler, K. Shek Qwah, T. Tak, A. Wissel-Garcia, I. Liu, F. Wu, S. Nakamura, and J. S. Speck, "Atomic layer etching (ALE) of III-nitrides", Applied Physics Letters, vol. 123, issue 6, 2023.
Marcinkevičius, S., Y. Chao Chow, S. Nakamura, and J. S. Speck, "Effect of Mg doping on carrier recombination in GaN", Journal of Applied Physics, vol. 134, issue 8, 2023.
Marcinkevičius, S., J. Ewing, R. Yapparov, F. Wu, S. Nakamura, and J. S. Speck, "Experimental evidence of hole injection through V-defects in long wavelength GaN-based LEDs", Applied Physics Letters, vol. 123, issue 20, 2023.
Ewing, J. J., C. Lynsky, M. S. Wong, F. Wu, Y. Chao Chow, P. Shapturenka, M. Iza, S. Nakamura, S. P. DenBaars, and J. S. Speck, "High external quantum efficiency (6.5%) InGaN V-defect LEDs to 600 nm and patterned sapphire substrates", Optics Express, vol. 31, issue 25, pp. 41351-41360, 2023.
Yao, Y., H. Li, M. Wang, P. Li, M. Lam, M. Iza, J. S. Speck, S. P. DenBaars, and S. Nakamura, "High external quantum efficiency (6.8%) UV-A LEDs on AlN templates with quantum barrier optimization", Optics Express, vol. 31, issue 18, pp. 28649-28657, 2023.
Li, P., H. Li, Y. Yao, K. Shek Qwah, M. Iza, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Hybrid tunnel junction enabled independent junction control of cascaded InGaN blue/green micro-light-emitting diodes", Opt. Express, vol. 31, pp. 7572–7578, Feb, 2023.
Ho, W. Ying, Y. Chao Chow, S. Nakamura, J. Peretti, C. Weisbuch, and J. S. Speck, "Measurement of minority carrier diffusion length in p-GaN using electron emission spectroscopy (EES)", Applied Physics Letters, vol. 122, 2023.
Wong, M. S., H. Zhang, E. S. Trageser, R. M. Anderson, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Narrow ridge III-nitride m-plane violet edge-emitting laser diodes with sidewall passivation using atomic layer deposition", Gallium Nitride Materials and Devices XVIII: International Society for Optics and Photonics, 2023.
Chow, Y. Chao, T. Tak, F. Wu, J. Ewing, S. Nakamura, S. P. DenBaars, Y. Ren Wu, C. Weisbuch, and J. S. Speck, "Origins of the high-energy electroluminescence peaks in long-wavelength (~ 495-685 nm) InGaN light-emitting diodes", Applied Physics Letters, vol. 123, issue 9, 2023.
Wong, M. S., R. C. White, S. Gee, T. Tak, S. Gandrothula, H. Choi, S. Nakamura, J. S. Speck, and S. P. DenBaars, "Recovering the efficiency of AlGaInP red micro-LEDs using sidewall treatments", Applied Physics Express, vol. 16, issue 6, 2023.
Ho, W. Ying, C. W. Johnson, T. Tak, M. Sauty, Y. Chao Chow, S. Nakamura, A. Schmid, J. Peretti, C. Weisbuch, and J. S. Speck, "Steady-state junction current distribution in pn GaN diodes measured using low-energy electron microscopy (LEEM)", Applied Physics Letters, vol. 123, issue 3, 2023.
Wu, F., J. Ewing, C. Lynsky, M. Iza, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Structure of V-defects in long wavelength GaN-based light emitting diodes", Journal of Applied Physics, vol. 133, 01/2023.
2022
Hamdy, S. W., S. P. DenBaars, J. S. Speck, and S. Nakamura, "Designs for III-nitride edge-emitting laser diodes with tunnel junction contacts for low internal optical absorption loss", Optical Engineering, vol. 61, pp. 027102, 2022.
Yapparov, R., C. Lynsky, Y. Chao Chow, S. Nakamura, S. P. DenBaars, J. S. Speck, and S. Marcinkevičius, "Engineering of quantum barriers for efficient InGaN quantum well LEDs", Optica Advanced Photonics Congress 2022: Optica Publishing Group, 2022.
Denbaars, S., M. Wong, P. Li, H. Li, J. Smith, R. White, J. Ewing, P. Shapturenka, M. Gordon, C. Lynsky, et al., "III-nitride-based RGB microLEDs for AR/VR applications", Light-Emitting Devices, Materials, and Applications XXVI: International Society for Optics and Photonics, 2022.
Yao, Y., H. Li, P. Li, C. J. Zollner, M. Wang, M. Iza, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Size dependent characteristics of AlGaN-based deep ultraviolet micro-light-emitting-diodes", Applied Physics Express, vol. 15, pp. 064003, may, 2022.
2021
Wong, M. S., D. Melchert, M. Haggmark, D. Myers, C. Lee, S. Grandrothula, M. de Vries, D. Gianola, M. Begley, T. Magarlith, et al., "Acousto-fluidic assembly of III-nitride micro-light-emitting diodes with magnetic alignment", Light-Emitting Devices, Materials, and Applications XXV: International Society for Optics and Photonics, 2021.
Wong, M. S., S. Ho Oh, J. Back, C. Lee, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Enhanced external quantum efficiency of III-nitride micro-light-emitting diodes using vertical and transparent package", Japanese Journal of Applied Physics, vol. 60, pp. 020905, jan, 2021.
Wong, M. S., S. Ho Oh, J. Back, C. Lee, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Enhanced external quantum efficiency of III-nitride micro-light-emitting diodes using vertical and transparent package", Japanese Journal of Applied Physics, vol. 60, pp. 020905, jan, 2021.
Wang, J., B. K. Saifaddin, C. J. Zollner, B. Bonef, A. S. Almogbel, Y. Yao, M. Iza, Y. Zhang, M. N. Fireman, E. C. Young, et al., "High conductivity n-Al0.6Ga0.4N by ammonia-assisted molecular beam epitaxy for buried tunnel junctions in UV emitters", Opt. Express, vol. 29, pp. 40781–40794, Dec, 2021.
Wong, M. S., J. S. Speck, S. Nakamura, and S. P. DenBaars, "High efficiency of III-nitride and AlGaInP micro-light-emitting diodes using atomic layer deposition", Light-Emitting Devices, Materials, and Applications XXV: International Society for Optics and Photonics, 2021.
Li, P., H. Li, H. Zhang, M. Iza, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Metalorganic chemical vapor deposition-grown tunnel junctions for low forward voltage InGaN light-emitting diodes: epitaxy optimization and light extraction simulation", Semiconductor Science and Technology, vol. 36, pp. 035019, 02/2021.
Kamikawa, T., S. Gandrothula, H. Li, B. V. Olivia, F. Wu, D. Cohen, J. S. Speck, S. P. DenBaars, and S. Nakamura, "New fabrication method of InGaN laser diode by epitaxial lateral overgrowth and cleavable technique from free-standing non- and semi-polar GaN substrate", Gallium Nitride Materials and Devices XVI: International Society for Optics and Photonics, 2021.
Lynsky, C., R. C. White, Y. Chao Chow, W. Ying Ho, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Role of V-defect density on the performance of III-nitride green LEDs on sapphire substrates", Journal of Crystal Growth, vol. 560-561, pp. 126048, 2021.

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