Narrow ridge III-nitride m-plane violet edge-emitting laser diodes with sidewall passivation using atomic layer deposition

TitleNarrow ridge III-nitride m-plane violet edge-emitting laser diodes with sidewall passivation using atomic layer deposition
Publication TypeConference Paper
Year of Publication2023
AuthorsWong, M. S., H. Zhang, E. S. Trageser, R. M. Anderson, J. S. Speck, S. Nakamura, and S. P. DenBaars
EditorFujioka, H., H. Morkoç, and U. T. Schwarz
Conference NameGallium Nitride Materials and Devices XVIII
PublisherInternational Society for Optics and Photonics
KeywordsALD passivation, etching through active region, narrow ridge lasers
URLhttps://doi.org/10.1117/12.2646155
DOI10.1117/12.2646155