Engineering of quantum barriers for efficient InGaN quantum well LEDs

TitleEngineering of quantum barriers for efficient InGaN quantum well LEDs
Publication TypeConference Paper
Year of Publication2022
AuthorsYapparov, R., C. Lynsky, Y. Chao Chow, S. Nakamura, S. P. DenBaars, J. S. Speck, and S. Marcinkevičius
Conference NameOptica Advanced Photonics Congress 2022
PublisherOptica Publishing Group
KeywordsAluminum gallium nitride, Diode lasers, Indium gallium nitride, light emitting diodes, Multiple quantum wells, Quantum wells
Abstract

Ways to improve efficiency of high-power LEDs based on InGaN/(In)GaN multiple quantum wells are explored by studying interwell carrier transport and recombination. Best results are achieved for InGaN barriers with thin GaN or AlGaN interlayers.

URLhttps://opg.optica.org/abstract.cfm?URI=NOMA-2022-NoW4D.6
DOI10.1364/NOMA.2022.NoW4D.6