Publications

Found 11 results
Author Title Type [ Year(Asc)]
Filters: Author is Panpan Li  [Clear All Filters]
2022
Denbaars, S., M. Wong, P. Li, H. Li, J. Smith, R. White, J. Ewing, P. Shapturenka, M. Gordon, C. Lynsky, et al., "III-nitride-based RGB microLEDs for AR/VR applications", Light-Emitting Devices, Materials, and Applications XXVI: International Society for Optics and Photonics, 2022.
Yao, Y., H. Li, P. Li, C. J. Zollner, M. Wang, M. Iza, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Size dependent characteristics of AlGaN-based deep ultraviolet micro-light-emitting-diodes", Applied Physics Express, vol. 15, pp. 064003, may, 2022.
2020
Khoury, M., H. Li, B. Bonef, T. Mates, F. Wu, P. Li, M. S. Wong, H. Zhang, J. Song, J. Choi, et al., "560 nm InGaN micro-LEDs on low-defect-density and scalable (202̅1) semipolar GaN on patterned sapphire substrates", Opt. Express, vol. 28, pp. 18150–18159, Jun, 2020.
Li, H., H. Zhang, P. Li, M. S. Wong, Y. Chao Chow, S. Pinna, J. Klamkin, P. DeMierry, J. S. Speck, S. Nakamura, et al., "Development of efficient semipolar InGaN long wavelength light-emitting diodes and blue laser diodes grown on a high quality semipolar GaN/sapphire template", Journal of Physics: Photonics, vol. 2, pp. 031003, jun, 2020.
Li, H., P. Li, H. Zhang, Y. Chao Chow, M. S. Wong, S. Pinna, J. Klamkin, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Electrically driven, polarized, phosphor-free white semipolar (20-21) InGaN light-emitting diodes grown on semipolar bulk GaN substrate", Opt. Express, vol. 28, pp. 13569–13575, Apr, 2020.
Li, P., H. Zhang, H. Li, Y. Zhang, Y. Yao, N. Palmquist, M. Iza, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Metalorganic chemical vapor deposition grown n-InGaN/n-GaN tunnel junctions for micro-light-emitting diodes with very low forward voltage", Semiconductor Science and Technology, vol. 35, pp. 125023, oct, 2020.
Khoury, M., H. Li, P. Li, Y. Chao Chow, B. Bonef, H. Zhang, M. S. Wong, S. Pinna, J. Song, J. Choi, et al., "Polarized monolithic white semipolar (202̅1) InGaN light-emitting diodes grown on high quality (202̅1) GaN/sapphire templates and its application to visible light communication", Nano Energy, vol. 67, pp. 104236, 2020.
Li, P., H. Zhang, H. Li, M. Iza, Y. Yao, M. S. Wong, N. Palmquist, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Size-independent low voltage of InGaN micro-light-emitting diodes with epitaxial tunnel junctions using selective area growth by metalorganic chemical vapor deposition", Opt. Express, vol. 28, pp. 18707–18712, Jun, 2020.