We demonstrate InGaN-based semipolar 560 nm micro-light-emitting diodes with 2.5% EQE on high-quality and low-defect-density (20-21) GaN templates grown on scalable and low-cost sapphire substrates. Through transmission electron microscopy observations, we discuss how the management of misfit dislocations and their confinement in areas away from the active light-emitting region is necessary for improving device performance. We also discuss how the patterning of semipolar GaN on sapphire influences material properties in terms of surface roughness and undesired faceting in addition to indium segregation at the proximity of defected areas.