We demonstrate vertical integration of nitride-based blue/green micro-light-emitting diodes (&\#x00B5;LEDs) stacks with independent junctions control using hybrid tunnel junction (TJ). The hybrid TJ was gown by metal organic chemical vapor deposition (p&\#x2009;&\#x002B;&\#x2009;GaN) and molecular-beam epitaxy (n&\#x2009;&\#x002B;&\#x2009;GaN). Uniform blue, green and blue/green emission can be generated from different junction diodes. The peak external quantum efficiency (EQE) of the TJ blue &\#x00B5;LEDs and green &\#x00B5;LEDs with indium tin oxide contact is 30&\#x0025; and 12&\#x0025;, respectively. The carrier transportation between different junction diodes was discussed. This work suggests a promising approach for vertical &\#x00B5;LEDs integration to enhance the output power of single LEDs chip and monolithic &\#x00B5;LEDs with different emission colors with independent junction control.