High external quantum efficiency (6.5%) InGaN V-defect LEDs to 600 nm and patterned sapphire substrates

TitleHigh external quantum efficiency (6.5%) InGaN V-defect LEDs to 600 nm and patterned sapphire substrates
Publication TypeJournal Article
Year of Publication2023
AuthorsEwing, J. J., C. Lynsky, M. S. Wong, F. Wu, Y. Chao Chow, P. Shapturenka, M. Iza, S. Nakamura, S. P. DenBaars, and J. S. Speck
JournalOptics Express
Volume31
Issue25
Pagination41351-41360