| Title | New fabrication method of InGaN laser diode by epitaxial lateral overgrowth and cleavable technique from free-standing non- and semi-polar GaN substrate |
| Publication Type | Conference Paper |
| Year of Publication | 2021 |
| Authors | Kamikawa, T., S. Gandrothula, H. Li, B. V. Olivia, F. Wu, D. Cohen, J. S. Speck, S. P. DenBaars, and S. Nakamura |
| Editor | Fujioka, H., H. Morkoç, and U. T. Schwarz |
| Conference Name | Gallium Nitride Materials and Devices XVI |
| Publisher | International Society for Optics and Photonics |
| Keywords | cleave, epitaxial lateral overgrowth, GaN, laser, non-polar, removal, semi-polar, substrate recycling |
| URL | https://doi.org/10.1117/12.2584814 |
| DOI | 10.1117/12.2584814 |
