Publications

Found 37 results
Author Title Type [ Year(Asc)]
Filters: Author is Speck, James S.  [Clear All Filters]
2023
Itoh, T., A. Mauze, Y. Zhang, and J. S. Speck, "Continuous Si doping in (010) and (001) β-Ga2O3 films by plasma-assisted molecular beam epitaxy", APL Materials, vol. 11, 04, 2023.
Ho, W. Ying, A. I. Alhassan, C. Lynsky, Y. Chao Chow, D. J. Myers, S. P. DenBaars, S. Nakamura, J. Peretti, C. Weisbuch, and J. S. Speck, "Detection of hot electrons originating from an upper valley at 1.7 eV above the Γ valley in wurtzite GaN using electron emission spectroscopy", Phys. Rev. B, vol. 107, pp. 035303, Jan, 2023.
Wong, M. S., A. Raj, H-M. Chang, V. Rienzi, F. Wu, J. J. Ewing, E. S. Trageser, S. Gee, N. C. Palmquist, P. Chan, et al., "Improved wall-plug efficiency of III-nitride tunnel junction micro-light-emitting diodes with AlGaN/GaN polarization charges", AIP Advances, vol. 13, 01, 2023.
Li, P., H. Li, Y. Yang, M. S. Wong, M. Iza, M. J. Gordon, J. S. Speck, S. Nakamura, and S. P. DenBaars, "InGaN amber micrometer-scale light-emitting diodes with a peak external quantum efficiency of 5.5%", Applied Physics Express, 2023.
Sauty, M., N. Alyabyeva, C. Lynsky, Y. Chao Chow, S. Nakamura, J. S. Speck, Y. Lassailly, A. C. H. Rowe, C. Weisbuch, and J. Peretti, "Probing Local Emission Properties in InGaN/GaN Quantum Wells by Scanning Tunneling Luminescence Microscopy", physica status solidi (b), vol. 260, pp. 2200365, 2023.
Li, P., H. Li, Y. Yao, N. Lim, M. Wong, M. Iza, M. J. Gordon, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Significant Quantum Efficiency Enhancement of InGaN Red Micro-Light-Emitting Diodes with a Peak External Quantum Efficiency of up to 6%", ACS Photonics, pp. null, 2023.
Wu, F., J. Ewing, C. Lynsky, M. Iza, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Structure of V-defects in long wavelength GaN-based light emitting diodes", Journal of Applied Physics, vol. 133, 01, 2023.
2022
Mauze, A., T. Itoh, Y. Zhang, E. Deagueros, F. Wu, and J. S. Speck, "Coherently strained (001) β-(AlxGa1−x)2O3 thin films on β-Ga2O3: Growth and compositional analysis", Journal of Applied Physics, vol. 132, 09, 2022.
Li, P., H. Li, Y. Yang, H. Zhang, P. Shapturenka, M. Wong, C. Lynsky, M. Iza, M. J. Gordon, J. S. Speck, et al., "Demonstration of ultra-small 5 × 5 μm2 607 nm InGaN amber micro-light-emitting diodes with an external quantum efficiency over 2\%", Applied Physics Letters, vol. 120, 01, 2022.
Ho, C-H., J. S. Speck, C. Weisbuch, and Y-R. Wu, "Efficiency and Forward Voltage of Blue and Green Lateral LEDs with V-shaped Defects and Random Alloy Fluctuation in Quantum Wells", Phys. Rev. Appl., vol. 17, pp. 014033, Jan, 2022.
Lynsky, C., G. Lheureux, B. Bonef, K. Shek Qwah, R. C. White, S. P. DenBaars, S. Nakamura, Y-R. Wu, C. Weisbuch, and J. S. Speck, "Improved Vertical Carrier Transport for Green III-Nitride LEDs Using $(\mathrmIn,\mathrmGa)\mathrmN$ Alloy Quantum Barriers", Phys. Rev. Appl., vol. 17, pp. 054048, May, 2022.
Qwah, K. Shek, E. Farzana, A. Wissel, M. Monavarian, T. Mates, and J. S. Speck, "Indium as a surfactant: Effects on growth morphology and background impurity in GaN films grown by ammonia-assisted molecular beam epitaxy", APL Materials, vol. 10, 08, 2022.
Ewing, J., C. Lynsky, J. Zhang, P. Shapturenka, M. Wong, J. Smith, M. Iza, J. S. Speck, and S. P. DenBaars, "Influence of Superlattice Structure on V-Defect Distribution, External Quantum Efficiency and Electroluminescence for Red InGaN Based µLEDs on Silicon", Crystals, vol. 12, pp. 1216, 2022.
Wong, M. S., P. Chan, N. Lim, H. Zhang, R. C. White, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Low Forward Voltage III-Nitride Red Micro-Light-Emitting Diodes on a Strain Relaxed Template with an InGaN Decomposition Layer", Crystals, vol. 12, pp. 721, 2022.
Farzana, E., A. Bhattacharyya, N. S. Hendricks, T. Itoh, S. Krishnamoorthy, and J. S. Speck, "Oxidized metal Schottky contact with high-κ dielectric field plate for low-loss high-power vertical β-Ga2O3 Schottky diodes", APL Materials, vol. 10, 11, 2022.
Yao, Y., C. J. Zollner, M. Wang, M. Iza, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Polarization-Enhanced p-AlGaN Superlattice Optimization for GUV LED", IEEE Journal of Quantum Electronics, vol. 58, pp. 1-9, 2022.
Wong, M. S., J. S. Speck, S. Nakamura, and S. P. DenBaars, "Progress in III-Nitride Tunnel Junctions for Optoelectronic Devices", IEEE Journal of Quantum Electronics, vol. 58, pp. 1-11, 2022.
Li, P., H. Li, M. S. Wong, P. Chan, Y. Yang, H. Zhang, M. Iza, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Progress of InGaN-Based Red Micro-Light Emitting Diodes", Crystals, vol. 12, pp. 541, 2022.
Li, P., H. Li, H. Zhang, Y. Yang, M. S. Wong, C. Lynsky, M. Iza, M. J. Gordon, J. S. Speck, S. Nakamura, et al., "Red InGaN micro-light-emitting diodes (\>620 nm) with a peak external quantum efficiency of 4.5\% using an epitaxial tunnel junction contact", Applied Physics Letters, vol. 120, 03, 2022.
Mukhopadhyay, P., I. Hatipoglu, Y. K. Frodason, J. B. Varley, M. S. Williams, D. A. Hunter, N. K. Gunasekar, P. R. Edwards, R. W. Martin, F. Wu, et al., "Role of defects in ultra-high gain in fast planar tin gallium oxide UV-C photodetector by MBE", Applied Physics Letters, vol. 121, 09, 2022.
Huynh, K., M. E. Liao, A. Mauze, T. Itoh, X. Yan, J. S. Speck, X. Pan, and M. S. Goorsky, "Surface reaction dependence of molecular beam epitaxy grown aluminum on various orientations of β-Ga2O3", APL Materials, vol. 10, 01, 2022.
2021
Monavarian, M., J. Xu, M. Khoury, F. Wu, P. De Mierry, P. Vennéguès, M. A. Belkin, and J. S. Speck, "Defect Tolerance of Intersubband Transitions in Nonpolar $\mathrmGa\mathrmN/(\mathrmAl,\mathrmGa)\mathrmN$ Heterostructures: A Path toward Low-Cost and Scalable Mid- to Far-Infrared Optoelectronics", Phys. Rev. Appl., vol. 16, pp. 054040, Nov, 2021.
Wong, M. S., N. C. Palmquist, J. Jiang, P. Chan, C. Lee, P. Li, J. Hun Kang, Y. Hyun Baek, C. Hon Kim, D. A. Cohen, et al., "Effects of activation method and temperature to III-nitride micro-light-emitting diodes with tunnel junction contacts grown by metalorganic chemical vapor deposition", Applied Physics Letters, vol. 119, 11, 2021.
Li, P., A. David, H. Li, H. Zhang, C. Lynsky, Y. Yang, M. Iza, J. S. Speck, S. Nakamura, and S. P. DenBaars, "High-temperature electroluminescence properties of InGaN red 40 × 40 μm2 micro-light-emitting diodes with a peak external quantum efficiency of 3.2\%", Applied Physics Letters, vol. 119, 12, 2021.
Mauze, A., Y. Zhang, T. Itoh, T. E. Mates, H. Peelaers, C. G. Van de Walle, and J. S. Speck, "Mg doping and diffusion in (010) β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy", Journal of Applied Physics, vol. 130, 12, 2021.

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