Publications
"Effects of activation method and temperature to III-nitride micro-light-emitting diodes with tunnel junction contacts grown by metalorganic chemical vapor deposition", Applied Physics Letters, vol. 119, 11, 2021.
, "Semipolar GaN-based laser diodes for Gbit/s white lighting communication: devices to systems", Gallium Nitride Materials and Devices XIII, vol. 10532: International Society for Optics and Photonics, pp. 105321N, 2018.
, "Semipolar InGaN quantum-well laser diode with integrated amplifier for visible light communications", Optics express, vol. 26, no. 6: Optical Society of America, pp. A219–A226, 2018.
, "Gigabit-per-second white light-based visible light communication using near-ultraviolet laser diode and red-, green-, and blue-emitting phosphors", Optics express, vol. 25, no. 15: Optical Society of America, pp. 17480–17487, 2017.
, "Integrated photonic platform based on semipolar InGaN/GaN multiple section laser diodes", Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2017 Conference on: IEEE, pp. 1–2, 2017.
, "Semipolar InGaN-based superluminescent diodes for solid-state lighting and visible light communications", Gallium Nitride Materials and Devices XII, vol. 10104: International Society for Optics and Photonics, pp. 101041U, 2017.
, Towards III-nitride photonic IC: a new platform for smart lighting and visible light communication, 2017.
, "Turbocharging LiFi with semi-polar lasers", III-Vs get out and about, pp. 60, 2017.
, "Demonstration of a III-nitride edge-emitting laser diode utilizing a GaN tunnel junction contact", Optics express, vol. 24, no. 7: Optical Society of America, pp. 7816–7822, 2016.
, "Dynamic characteristics of 410 nm semipolar (20 2 1) iii-nitride laser diodes with a modulation bandwidth of over 5 ghz", Applied Physics Letters, vol. 109, no. 10: AIP Publishing, pp. 101104, 2016.
, "GHz modulation enabled using large extinction ratio waveguide-modulator integrated with 404 nm GaN laser diode", Photonics Conference (IPC), 2016 IEEE: IEEE, pp. 813–814, 2016.
, "High gain semiconductor optical amplifieróLaser diode at visible wavelength", Electron Devices Meeting (IEDM), 2016 IEEE International: IEEE, pp. 22–4, 2016.
, "High speed performance of III-nitride laser diode grown on (2021) semipolar plane for visible light communication", Photonics Conference (IPC), 2016 IEEE: IEEE, pp. 809–810, 2016.
, "High-speed 405-nm superluminescent diode (SLD) with 807-MHz modulation bandwidth", Optics express, vol. 24, no. 18: Optical Society of America, pp. 20281–20286, 2016.
, "High-speed performance of III-nitride 410 nm ridge laser diode on (202Ø1Ø) plane for visible light communication", Compound Semiconductor Week (CSW)[Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS), 2016: IEEE, pp. 1–2, 2016.
, "Hybrid MOCVD/MBE GaN tunnel junction LEDs with greater than 70% wall plug efficiency", Compound Semiconductor Week (CSW)[Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS), 2016: IEEE, pp. 1–1, 2016.
, "2 Gbit/s data transmission from an unfiltered laser-based phosphor-converted white lighting communication system", Optics express, vol. 23, no. 23: Optical Society of America, pp. 29779–29787, 2015.
, "2.6 GHz high-speed visible light communication of 450 nm GaN laser diode by direct modulation", Summer Topicals Meeting Series (SUM), 2015: IEEE, pp. 228–229, 2015.
, "4 Gbps direct modulation of 450 nm GaN laser for high-speed visible light communication", Optics express, vol. 23, no. 12: Optical Society of America, pp. 16232–16237, 2015.
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