Publications

Found 6 results
Author Title Type [ Year(Asc)]
Filters: Author is Iza, Mike  [Clear All Filters]
2023
Li, P., H. Li, Y. Yao, N. Lim, M. Wong, M. Iza, M. J. Gordon, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Significant Quantum Efficiency Enhancement of InGaN Red Micro-Light-Emitting Diodes with a Peak External Quantum Efficiency of up to 6%", ACS Photonics, pp. null, 2023.
2022
Li, P., H. Li, Y. Yang, H. Zhang, P. Shapturenka, M. Wong, C. Lynsky, M. Iza, M. J. Gordon, J. S. Speck, et al., "Demonstration of ultra-small 5 × 5 μm2 607 nm InGaN amber micro-light-emitting diodes with an external quantum efficiency over 2\%", Applied Physics Letters, vol. 120, 01, 2022.
Li, P., H. Li, M. S. Wong, P. Chan, Y. Yang, H. Zhang, M. Iza, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Progress of InGaN-Based Red Micro-Light Emitting Diodes", Crystals, vol. 12, pp. 541, 2022.
Li, P., H. Li, H. Zhang, Y. Yang, M. S. Wong, C. Lynsky, M. Iza, M. J. Gordon, J. S. Speck, S. Nakamura, et al., "Red InGaN micro-light-emitting diodes (\>620 nm) with a peak external quantum efficiency of 4.5\% using an epitaxial tunnel junction contact", Applied Physics Letters, vol. 120, 03, 2022.
2021
Li, P., A. David, H. Li, H. Zhang, C. Lynsky, Y. Yang, M. Iza, J. S. Speck, S. Nakamura, and S. P. DenBaars, "High-temperature electroluminescence properties of InGaN red 40 × 40 μm2 micro-light-emitting diodes with a peak external quantum efficiency of 3.2\%", Applied Physics Letters, vol. 119, 12, 2021.
2006
Waki, I., M. Iza, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Etching of Ga-face and N-face GaN by inductively coupled plasma", Japanese journal of applied physics, vol. 45, no. 2R: IOP Publishing, pp. 720, 2006.