Red micro-size light-emitting diodes (μLEDs) less than 10 × 10 μm2 are crucial for augmented reality (AR) and virtual reality (VR) applications. However, they remain very challenging since the common AlInGaP red μLEDs with such small size suffer from a dramatic reduction in the external quantum efficiency. In this work, we demonstrate ultra-small 5 × 5 μm2 607 nm amber μLEDs using InGaN materials, which show an EQE over 2\% and an ultra-low reverse current of 10−9 A at −5 V. This demonstration suggests promising results of ultra-small InGaN μLEDs for AR and VR displays.