In this work, we report the growth of Mg-doped (010) β-Ga2O3 via plasma-assisted molecular beam epitaxy. Mg concentrations from 2 × 1016 to 8 × 1020 cm−3 with sharp doping profiles were realized. The Mg doping incorporation in β-Ga2O3 showed little dependence on the growth temperature and Ga:O flux ratio. Annealing at temperatures from 925 to 1050 °C resulted in significant diffusion, thus limiting the application of Mg-doped β-Ga2O3 to lower temperature growth techniques and processing. Mg accumulation near the sample surface after diffusion gives insight into the rich point–defect interaction that may play an important role in Mg diffusion.