We demonstrate high performance 10×10 µm2 InGaN amber micro-size light-emitting diodes (µLEDs). At 15 A/cm2, the InGaN µLEDs show a single emission peak located at 601 nm. The peak external quantum efficiency (EQE) and wall-plug efficiency is 5.5% and 3.2%, respectively. Compared to the 100×100 µm2 µLEDs, the 10×10 µm2 InGaN red µLEDs maintain a similar EQE value with a same efficiency droop. These results point out that InGaN materials are much more promising for a higher efficiency than the common AlInGaP materials for the ultra-small size red µLEDs required by augmented reality and virtual reality displays.