Reduction of carbon proximity effects by including AlGaN back barriers in HEMTs on free-standing GaN

TitleReduction of carbon proximity effects by including AlGaN back barriers in HEMTs on free-standing GaN
Publication TypeJournal Article
Year of Publication2013
AuthorsKaun, SW., MH. Wong, J. Lu, UK. Mishra, and JS. Speck
JournalElectronics Letters
Volume49
Pagination893–895