Publications

Found 121 results
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2024
Tak, T., A. Quevedo, F. Wu, S. Gandrothula, J. J. Ewing, S. Gee, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Planarization of p-GaN surfaces on MOCVD grown V-defect engineered GaN-based LEDs", Applied Physics Letters, vol. 124, issue 17, 04/2024.
Ewing, J. J., F. Wu, A. Quevedo, T. Tak, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Pure edge-dislocation half-loops in low-temperature GaN for V-defect formation", Physical Review Applied, vol. 21, issue 6, 06/2024.
2023
Sauty, M., N. Alyabyeva, C. Lynsky, Y. Chao Chow, S. Nakamura, J. S. Speck, Y. Lassailly, A. C. H. Rowe, C. Weisbuch, and J. Peretti, "Probing Local Emission Properties in InGaN/GaN Quantum Wells by Scanning Tunneling Luminescence Microscopy", physica status solidi (b), vol. 260, pp. 2200365, 2023.
2022
Yao, Y., C. J. Zollner, M. Wang, M. Iza, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Polarization-Enhanced p-AlGaN Superlattice Optimization for GUV LED", IEEE Journal of Quantum Electronics, vol. 58, pp. 1-9, 2022.
Wong, M. S., J. S. Speck, S. Nakamura, and S. P. DenBaars, "Progress in III-Nitride Tunnel Junctions for Optoelectronic Devices", IEEE Journal of Quantum Electronics, vol. 58, pp. 1-11, 2022.
Li, P., H. Li, M. S. Wong, P. Chan, Y. Yang, H. Zhang, M. Iza, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Progress of InGaN-Based Red Micro-Light Emitting Diodes", Crystals, vol. 12, pp. 541, 2022.
2020
A., M., and S. J., "Plasma-Assisted Molecular Beam Epitaxy 1", Gallium Oxide, vol. 293: Springer, Cham, 2020.
Khoury, M., H. Li, P. Li, Y. Chao Chow, B. Bonef, H. Zhang, M. S. Wong, S. Pinna, J. Song, J. Choi, et al., "Polarized monolithic white semipolar (202̅1) InGaN light-emitting diodes grown on high quality (202̅1) GaN/sapphire templates and its application to visible light communication", Nano Energy, vol. 67, pp. 104236, 2020.
2019
Kudrawiec, R., L. Janicki, W. M. Linhart, M. A. Mayer, I. D. Sharp, S. Choi, O. Bierwagen, J. S. Speck, and W. Walukiewicz, "Photoreflectance and photoinduced microwave reflectance studies of surface band bending in Mg-doped InN", Journal of Applied Physics, vol. 126, pp. 045712, 2019.
Baj, M., L. H. Dmowski, A. Kwiatkowski, J. Przybytek, X. Wang, G. Koblmüller, C. S. Gallinat, and J. S. Speck, "Puzzle of non-surface related 2D electron gas in n-InN epitaxial samples", Journal of Applied Physics, vol. 126, pp. 045705, 2019.
2018
Speck, J. S., "Progress in beta-gallium-oxide materials and devices (Conference Presentation)", Oxide-based Materials and Devices IX, vol. 10533: International Society for Optics and Photonics, pp. 1053307, 2018.
Kuritzky, L. Y., C. Weisbuch, and J. S. Speck, "Prospects for 100% wall-plug efficient III-nitride LEDs", Opt. Express, vol. 26, pp. 16600–16608, Jun, 2018.
2017
Iso, K., H. Yamada, M. Saito, A. Hirai, S. P. DenBaars, J. S. Speck, and S. Nakamura, Planar nonpolar group iii-nitride films grown on miscut substrates, 2017.
Mughal, A. J., E. C. Young, A. I. Alhassan, J. Back, S. Nakamura, J. S. Speck, and S. P. DenBaars, "Polarization-enhanced InGaN/GaN-based hybrid tunnel junction contacts to GaN p–n diodes and InGaN LEDs", Applied Physics Express, vol. 10, no. 12: IOP Publishing, pp. 121006, 2017.
Ivanov, R., S. Marcinkevičius, M. D. Mensi, O. Martinez, L. Y. Kuritzky, D. J. Myers, S. Nakamura, and J. S. Speck, "Polarization-Resolved Near-Field Spectroscopy of Localized States in m-Plane In x Ga 1- x N/Ga N Quantum Wells", Physical Review Applied, vol. 7, no. 6: American Physical Society, pp. 064033, 2017.
Speck, J. S., PURE AND DISORDERED GROUP III NITRIDE HETEROSTRUCTURES: GROWTH AND PHYSICAL PROPERTIES, 2017.
2016
Hwang, D., B. P. Yonkee, B. Saif Addin, R. M. Farrell, S. Nakamura, J. S. Speck, and S. DenBaars, "Photoelectrochemical liftoff of LEDs grown on freestanding c-plane GaN substrates", Optics Express, vol. 24, no. 20: Optical Society of America, pp. 22875–22880, 2016.
Hirai, A., Z. Jia, M. Saito, H. Yamada, K. Iso, S. P. DenBaars, S. Nakamura, and J. S. Speck, Planar nonpolar group-III nitride films grown on miscut substrates, 2016.
Hestroffer, K., C. Lund, H. Li, S. Keller, J. S. Speck, and U. K. Mishra, "Plasma-assisted molecular beam epitaxy growth diagram of InGaN on (0001) GaN for the optimized synthesis of InGaN compositional grades", physica status solidi (b), vol. 253, no. 4, pp. 626–629, 2016.
Hestroffer, K., C. Lund, H. Li, S. Keller, J. S. Speck, and U. K. Mishra, "Plasma-assisted molecular beam epitaxy growth diagram of InGaN on (0001) GaN for the optimized synthesis of InGaN compositional grades (Phys. Status Solidi B 4/2016)", physica status solidi (b), vol. 253, no. 4, pp. 792–792, 2016.
Speck, J., "Point and Extended Defects in GaN-based Materials", APS March Meeting Abstracts, 2016.
Young, NG., RM. Farrell, S. Oh, M. Cantore, F. Wu, S. Nakamura, SP. DenBaars, C. Weisbuch, and JS. Speck, "Polarization field screening in thick (0001) InGaN/GaN single quantum well light-emitting diodes", Applied Physics Letters, vol. 108, no. 6: AIP Publishing, pp. 061105, 2016.
Mensi, M. D., D. L. Becerra, R. Ivanov, S. Marcinkevičius, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Properties of near-field photoluminescence in green emitting single and multiple semipolar (20< span style=", Optical Materials Express, vol. 6, no. 1: Optical Society of America, pp. 39–45, 2016.
2015
Schrimpf, RD., DM. Fleetwood, ST. Pantelides, YS. Puzyrev, S. Mukherjee, RA. Reed, JS. Speck, and UK. Mishra, "Physical mechanisms affecting the reliability of GaN-based high electron mobility transistors", MRS Online Proceedings Library Archive, vol. 1792: Cambridge University Press, 2015.
Marcinkevičius, S., A. Sztein, S. Nakamura, and J. S. Speck, "Properties of sub-band edge states in AlInN studied by time-resolved photoluminescence of a AlInN/GaN heterostructure", Semiconductor Science and Technology, vol. 30, no. 11: IOP Publishing, pp. 115017, 2015.

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