Properties of sub-band edge states in AlInN studied by time-resolved photoluminescence of a AlInN/GaN heterostructure

TitleProperties of sub-band edge states in AlInN studied by time-resolved photoluminescence of a AlInN/GaN heterostructure
Publication TypeJournal Article
Year of Publication2015
AuthorsMarcinkevičius, S., A. Sztein, S. Nakamura, and J. S. Speck
JournalSemiconductor Science and Technology
Volume30
Pagination115017