Publications

Found 1586 results
Author Title Type [ Year(Asc)]
2023
Yao, Y., H. Li, M. Wang, P. Li, M. Lam, M. Iza, J. S. Speck, S. P. DenBaars, and S. Nakamura, "High external quantum efficiency (6.8%) UV-A LEDs on AlN templates with quantum barrier optimization", Optics Express, vol. 31, issue 18, pp. 28649-28657, 2023.
Li, P., H. Li, Y. Yao, K. Shek Qwah, M. Iza, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Hybrid tunnel junction enabled independent junction control of cascaded InGaN blue/green micro-light-emitting diodes", Opt. Express, vol. 31, pp. 7572–7578, Feb, 2023.
Wong, M. S., A. Raj, H-M. Chang, V. Rienzi, F. Wu, J. J. Ewing, E. S. Trageser, S. Gee, N. C. Palmquist, P. Chan, et al., "Improved wall-plug efficiency of III-nitride tunnel junction micro-light-emitting diodes with AlGaN/GaN polarization charges", AIP Advances, vol. 13, 01, 2023.
Li, P., H. Li, Y. Yang, M. S. Wong, M. Iza, M. J. Gordon, J. S. Speck, S. Nakamura, and S. P. DenBaars, "InGaN amber micrometer-scale light-emitting diodes with a peak external quantum efficiency of 5.5%", Applied Physics Express, 2023.
Tak, T., C. W. Johnson, W. Ying Ho, F. Wu, M. Sauty, S. Rebollo, A. K. Schmid, J. Peretti, Y-R. Wu, C. Weisbuch, et al., "Injection mechanisms in a III-nitride light-emitting diode as seen by self-emissive electron microscopy", Physical Review Applied, vol. 20, issue 6, 2023.
Chow, Y. C., C. Lynsky, S. Nakamura, S. P. DenBaars, C. Weisbuch, and J. S. Speck, "Low-efficiency-droop c-plane InGaN/GaN light-emitting diodes through the use of thick single quantum wells and doped barriers", Journal of Applied Physics, vol. 133, 04, 2023.
Cadena, R. M., D. R. Ball, E. X. Zhang, S. Islam, A. Senarath, M. W. McCurdy, E. Farzana, J. S. Speck, N. Karom, A. O’Hara, et al., "Low-Energy Ion-Induced Single-Event Burnout in Gallium Oxide Schottky Diodes", IEEE Transactions on Nuclear Science, vol. 70, pp. 363-369, 2023.
Ho, W. Ying, Y. Chao Chow, S. Nakamura, J. Peretti, C. Weisbuch, and J. S. Speck, "Measurement of minority carrier diffusion length in p-GaN using electron emission spectroscopy (EES)", Applied Physics Letters, vol. 122, 2023.
Alema, F., T. Itoh, W. Brand, M. Tadjer, A. Osinsky, and J. S. Speck, "N2O grown high Al composition nitrogen doped Beta-(AlGa)2O3/Beta-Ga2O3 using MOCVD", Journal of Vacuum Science and Technology A, vol. 41, issue 4, 2023.
Wong, M. S., H. Zhang, E. S. Trageser, R. M. Anderson, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Narrow ridge III-nitride m-plane violet edge-emitting laser diodes with sidewall passivation using atomic layer deposition", Gallium Nitride Materials and Devices XVIII: International Society for Optics and Photonics, 2023.
Chow, Y. Chao, T. Tak, F. Wu, J. Ewing, S. Nakamura, S. P. DenBaars, Y. Ren Wu, C. Weisbuch, and J. S. Speck, "Origins of the high-energy electroluminescence peaks in long-wavelength (~ 495-685 nm) InGaN light-emitting diodes", Applied Physics Letters, vol. 123, issue 9, 2023.
Sauty, M., N. Alyabyeva, C. Lynsky, Y. Chao Chow, S. Nakamura, J. S. Speck, Y. Lassailly, A. C. H. Rowe, C. Weisbuch, and J. Peretti, "Probing Local Emission Properties in InGaN/GaN Quantum Wells by Scanning Tunneling Luminescence Microscopy", physica status solidi (b), vol. 260, pp. 2200365, 2023.
Wong, M. S., R. C. White, S. Gee, T. Tak, S. Gandrothula, H. Choi, S. Nakamura, J. S. Speck, and S. P. DenBaars, "Recovering the efficiency of AlGaInP red micro-LEDs using sidewall treatments", Applied Physics Express, vol. 16, issue 6, 2023.
Li, P., H. Li, Y. Yao, N. Lim, M. Wong, M. Iza, M. J. Gordon, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Significant Quantum Efficiency Enhancement of InGaN Red Micro-Light-Emitting Diodes with a Peak External Quantum Efficiency of up to 6%", ACS Photonics, pp. null, 2023.
Islam, S., A. S. Senarath, A. Sengupta, E. Xia Zhang, D. R. Ball, D. M. Fleetwood, R. D. Schrimpf, E. Farzana, A. Bhattacharyya, N. S. Hendricks, et al., "Single-Event Burnout by Cf-252 Irradiation in Vertical Beta-Ga2O3 Diodes with Pt and PtOx Schottky Contacts and High Permittivity Dielectric Field Plate", Device Research Conference (DRC), pp. 1-2, 2023.
Ho, W. Ying, C. W. Johnson, T. Tak, M. Sauty, Y. Chao Chow, S. Nakamura, A. Schmid, J. Peretti, C. Weisbuch, and J. S. Speck, "Steady-state junction current distribution in pn GaN diodes measured using low-energy electron microscopy (LEEM)", Applied Physics Letters, vol. 123, issue 3, 2023.
Wu, F., J. Ewing, C. Lynsky, M. Iza, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Structure of V-defects in long wavelength GaN-based light emitting diodes", Journal of Applied Physics, vol. 133, 01, 2023.
Wu, F., J. Ewing, C. Lynsky, M. Iza, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Structure of V-defects in long wavelength GaN-based light emitting diodes", Journal of Applied Physics, vol. 133, 01/2023.
Hendricks, N. S., E. Farzana, A. E. Islam, K. D. Leedy, K. J. Liddy, J. Williams, D. M. Dryden, A. M. Adams, J. S. Speck, K. D. Chabak, et al., "Vertical metal-dielectric-semiconductor diode on (001) Beta-Ga2O3 with high-k TiO2 interlayer exhibiting reduced turn-on voltage and leakage current and improved breakdown", Applied Physics Express, vol. 16, issue 7, 2023.
Farzana, E., S. Roy, N. S. Hendricks, S. Krishnamoorthy, and J. S. Speck, "Vertical PtOx/Pt/Beta-Ga2O3 Schottky diodes with high permittivity dielectric field plate for low leakage and high breakdown voltage", Applied Physics Letters, vol. 123, issue 19, 2023.
2022
Mauze, A., T. Itoh, Y. Zhang, E. Deagueros, F. Wu, and J. S. Speck, "Coherently strained (001) β-(AlxGa1−x)2O3 thin films on β-Ga2O3: Growth and compositional analysis", Journal of Applied Physics, vol. 132, 09, 2022.
Li, P., H. Li, Y. Yang, H. Zhang, P. Shapturenka, M. Wong, C. Lynsky, M. Iza, M. J. Gordon, J. S. Speck, et al., "Demonstration of ultra-small 5 × 5 μm2 607 nm InGaN amber micro-light-emitting diodes with an external quantum efficiency over 2\%", Applied Physics Letters, vol. 120, 01, 2022.
Hamdy, S. W., S. P. DenBaars, J. S. Speck, and S. Nakamura, "Designs for III-nitride edge-emitting laser diodes with tunnel junction contacts for low internal optical absorption loss", Optical Engineering, vol. 61, pp. 027102, 2022.
Ho, C-H., J. S. Speck, C. Weisbuch, and Y-R. Wu, "Efficiency and Forward Voltage of Blue and Green Lateral LEDs with V-shaped Defects and Random Alloy Fluctuation in Quantum Wells", Phys. Rev. Appl., vol. 17, pp. 014033, Jan, 2022.
Yapparov, R., C. Lynsky, Y. Chao Chow, S. Nakamura, S. P. DenBaars, J. S. Speck, and S. Marcinkevičius, "Engineering of quantum barriers for efficient InGaN quantum well LEDs", Optica Advanced Photonics Congress 2022: Optica Publishing Group, 2022.

Pages