Publications

Found 1578 results
Author Title Type [ Year(Asc)]
2021
Kamikawa, T., S. Gandrothula, H. Li, B. V. Olivia, F. Wu, D. Cohen, J. S. Speck, S. P. DenBaars, and S. Nakamura, "New fabrication method of InGaN laser diode by epitaxial lateral overgrowth and cleavable technique from free-standing non- and semi-polar GaN substrate", Gallium Nitride Materials and Devices XVI: International Society for Optics and Photonics, 2021.
Chow, Y. C., C. Lynsky, F. Wu, S. Nakamura, S. P. DenBaars, C. Weisbuch, and J. S. Speck, "Reduction of efficiency droop in c-plane InGaN/GaN light-emitting diodes using a thick single quantum well with doped barriers", Applied Physics Letters, vol. 119, 11, 2021.
Lynsky, C., R. C. White, Y. Chao Chow, W. Ying Ho, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Role of V-defect density on the performance of III-nitride green LEDs on sapphire substrates", Journal of Crystal Growth, vol. 560-561, pp. 126048, 2021.
Mauze, A., T. Itoh, Y. Zhang, and J. S. Speck, "Sn doping of [beta]-Ga2O3 grown by plasma-assisted molecular beam epitaxy", Oxide-based Materials and Devices XII: International Society for Optics and Photonics, 2021.
Gandrothula, S., T. Kamikawa, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Study of surface roughness of lifted-off epitaxial lateral overgrown GaN layers for the n-DBR mirror of a III-nitride vertical-cavity surface emitting laser", Applied Physics Express, vol. 14, pp. 031002, feb, 2021.
Montgomery, R. H., Y. Zhang, C. Yuan, S. Kim, J. Shi, T. Itoh, A. Mauze, S. Kumar, J. Speck, and S. Graham, "Thermal management strategies for gallium oxide vertical trench-fin MOSFETs", Journal of Applied Physics, vol. 129, pp. 085301, 2021.
Shi, J., A. Krishnan, A. F. M. Anha Bhuiyan, Y. Rui Koh, K. Huynh, A. Mauze, S. Mu, B. M. Foley, H. Ahmad, T. Itoh, et al., "Thermal Transport Across Al-(AlxGa1-x)2O3 and Al-Ga2O3 Interfaces", International Electronic Packaging Technical Conference and Exhibition, vol. ASME 2021 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems, 10, 2021.
Farzana, E., F. Alema, W. Ying Ho, A. Mauze, T. Itoh, A. Osinsky, and J. S. Speck, "Vertical β-Ga2O3 Schottky diodes from metal-organic chemical vapor deposition with low on-resistance and high average breakdown field", Oxide-based Materials and Devices XII: International Society for Optics and Photonics, 2021.
2020
Lheureux, G., C. Lynsky, Y-R. Wu, J. S. Speck, and C. Weisbuch, "A 3D simulation comparison of carrier transport in green and blue c-plane multi-quantum well nitride light emitting diodes", Journal of Applied Physics, vol. 128, pp. 235703, 2020.
Khoury, M., H. Li, B. Bonef, T. Mates, F. Wu, P. Li, M. S. Wong, H. Zhang, J. Song, J. Choi, et al., "560 nm InGaN micro-LEDs on low-defect-density and scalable (202̅1) semipolar GaN on patterned sapphire substrates", Opt. Express, vol. 28, pp. 18150–18159, Jun, 2020.
Alkhazragi, O., C. H. Kang, M. Kong, G. Liu, C. Lee, K. Li, H. Zhang, J. M. Wagstaff, F. Alhawaj, T. K. Ng, et al., "7.4-Gbit/s Visible-Light Communication Utilizing Wavelength-Selective Semipolar Micro-Photodetector", IEEE Photonics Technology Letters, vol. 32, pp. 767-770, 2020.
SaifAddin, B. K., A. S. Almogbel, C. J. Zollner, F. Wu, B. Bonef, M. Iza, S. Nakamura, S. P. DenBaars, and J. S. Speck, "AlGaN Deep-Ultraviolet Light-Emitting Diodes Grown on SiC Substrates", ACS Photonics, 2020.
Gandrothula, S., T. Kamikawa, M. Araki, D. Cohen, J. S. Speck, S. Nakamura, and S. P. DenBaars, "An approach to remove homoepitaxially grown GaN layers by cleavage from the substrate surface", Applied Physics Express, vol. 13, pp. 041003, mar, 2020.
Lynsky, C., A. I. Alhassan, G. Lheureux, B. Bonef, S. P. DenBaars, S. Nakamura, Y-R. Wu, C. Weisbuch, and J. S. Speck, "Barriers to carrier transport in multiple quantum well nitride-based $c$-plane green light emitting diodes", Phys. Rev. Materials, vol. 4, pp. 054604, May, 2020.
Smith, J. M., R. Ley, M. S. Wong, Y. Hyun Baek, J. Hun Kang, C. Hon Kim, M. J. Gordon, S. Nakamura, J. S. Speck, and S. P. DenBaars, "Comparison of size-dependent characteristics of blue and green InGaN microLEDs down to 1 μm in diameter", Applied Physics Letters, vol. 116, pp. 071102, 2020.
Chow, Y. Chao, C. Lee, M. S. Wong, Y-R. Wu, S. Nakamura, S. P. DenBaars, J. E. Bowers, and J. S. Speck, "Dependence of carrier escape lifetimes on quantum barrier thickness in InGaN/GaN multiple quantum well photodetectors", Opt. Express, vol. 28, pp. 23796–23805, Aug, 2020.
Li, H., H. Zhang, P. Li, M. S. Wong, Y. Chao Chow, S. Pinna, J. Klamkin, P. DeMierry, J. S. Speck, S. Nakamura, et al., "Development of efficient semipolar InGaN long wavelength light-emitting diodes and blue laser diodes grown on a high quality semipolar GaN/sapphire template", Journal of Physics: Photonics, vol. 2, pp. 031003, jun, 2020.
Li, H., P. Li, H. Zhang, Y. Chao Chow, M. S. Wong, S. Pinna, J. Klamkin, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Electrically driven, polarized, phosphor-free white semipolar (20-21) InGaN light-emitting diodes grown on semipolar bulk GaN substrate", Opt. Express, vol. 28, pp. 13569–13575, Apr, 2020.
Itoh, T., A. Mauze, Y. Zhang, and J. S. Speck, "Epitaxial growth of β-Ga2O3 on (110) substrate by plasma-assisted molecular beam epitaxy", Applied Physics Letters, vol. 117, pp. 152105, 2020.
Wurm, C., E. Ahmadi, F. Wu, N. Hatui, S. Keller, J. Speck, and U. Mishra, "Growth of high-quality N-polar GaN on bulk GaN by plasma-assisted molecular beam epitaxy", Solid State Communications, vol. 305, pp. 113763, 2020.
Alema, F., Y. Zhang, A. Mauze, T. Itoh, J. S. Speck, B. Hertog, and A. Osinsky, "H2O vapor assisted growth of β-Ga2O3 by MOCVD", AIP Advances, vol. 10, pp. 085002, 2020.
Jorgensen, K. F., B. Bonef, and J. S. Speck, "High nitrogen flux plasma-assisted molecular beam epitaxy growth of InxGa1-xN films", Journal of Crystal Growth, vol. 546, pp. 125738, 2020.
Alias, E. A., M. E. A. Samsudin, N. Ibrahim, A. J. Mughal, S. P. DenBaars, J. S. Speck, S. Nakamura, and N. Zainal, "Highly efficient InGaN-based LED with pre-roughening backside of GaN substrate", J. Opt. Soc. Am. B, vol. 37, pp. 1614–1619, Jun, 2020.
Aleksiejūnas, R., K. Nomeika, O. Kravcov, S. Nargelas, L. Kuritzky, C. Lynsky, S. Nakamura, C. Weisbuch, and J. S. Speck, "Impact of Alloy-Disorder-Induced Localization on Hole Diffusion in Highly Excited c-Plane and m-Plane InGaN Quantum Wells", Phys. Rev. Applied, vol. 14, pp. 054043, Nov, 2020.
Zhang, Y., and J. S. Speck, "Importance of shallow hydrogenic dopants and material purity of ultra-wide bandgap semiconductors for vertical power electron devices", Semiconductor Science and Technology, vol. 35, pp. 125018, oct, 2020.

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