Title | An approach to remove homoepitaxially grown GaN layers by cleavage from the substrate surface |
Publication Type | Journal Article |
Year of Publication | 2020 |
Authors | Gandrothula, S., T. Kamikawa, M. Araki, D. Cohen, J. S. Speck, S. Nakamura, and S. P. DenBaars |
Journal | Applied Physics Express |
Volume | 13 |
Pagination | 041003 |
Date Published | mar |
Abstract | We demonstrate removal of homoepitaxially grown semi-polar gallium nitride (GaN) layers from the native substrates. The weak link at the interface of the epitaxial lateral overgrowth and cleavable m-plane of the respective native semi-polar plane is used to separate homoepitaxial GaN from its native substrate. Homoepitaxial GaN layers of the semi-polar planes, (101), (201), (301), (10), (20), and (30) are successfully removed. This approach allows the reuse of expensive semi-polar GaN substrates, eliminating one barrier to market introduction of superior optoelectronic devices grown with semi-polar orientations. |
URL | https://doi.org/10.35848%2F1882-0786%2Fab7bc9 |
DOI | 10.35848/1882-0786/ab7bc9 |