Publications

Found 1578 results
Author Title Type [ Year(Asc)]
2020
Wong, M. S., J. A. Kearns, C. Lee, J. M. Smith, C. Lynsky, G. Lheureux, H. Choi, J. Kim, C. Kim, S. Nakamura, et al., "Improved performance of AlGaInP red micro-light-emitting diodes with sidewall treatments", Opt. Express, vol. 28, pp. 5787–5793, Feb, 2020.
Alema, F., Y. Zhang, A. Osinsky, N. Orishchin, N. Valente, A. Mauze, and J. S. Speck, "Low 10^14  cm−3 free carrier concentration in epitaxial β-Ga2O3 grown by MOCVD", APL Materials, vol. 8, pp. 021110, 2020.
Marcinkevičius, S., R. Yapparov, L. Y. Kuritzky, Y-R. Wu, S. Nakamura, and J. S. Speck, "Low-temperature carrier transport across InGaN multiple quantum wells: Evidence of ballistic hole transport", Phys. Rev. B, vol. 101, pp. 075305, Feb, 2020.
Mauze, A., Y. Zhang, T. Itoh, F. Wu, and J. S. Speck, "Metal oxide catalyzed epitaxy (MOCATAXY) of β-Ga2O3 films in various orientations grown by plasma-assisted molecular beam epitaxy", APL Materials, vol. 8, pp. 021104, 2020.
Li, P., H. Zhang, H. Li, Y. Zhang, Y. Yao, N. Palmquist, M. Iza, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Metalorganic chemical vapor deposition grown n-InGaN/n-GaN tunnel junctions for micro-light-emitting diodes with very low forward voltage", Semiconductor Science and Technology, vol. 35, pp. 125023, oct, 2020.
Yuan, C., Y. Zhang, R. Montgomery, S. Kim, J. Shi, A. Mauze, T. Itoh, J. S. Speck, and S. Graham, "Modeling and analysis for thermal management in gallium oxide field-effect transistors", Journal of Applied Physics, vol. 127, pp. 154502, 2020.
Yapparov, R., C. Lynsky, S. Nakamura, J. S. Speck, and S. Marcinkevičius, "Optimization of barrier height in InGaN quantum wells for rapid interwell carrier transport and low nonradiative recombination", Applied Physics Express, vol. 13, pp. 122005, nov, 2020.
Farzana, E., J. Wang, M. Monavarian, T. Itoh, K. S. Qwah, Z. J. Biegler, K. F. Jorgensen, and J. S. Speck, "Over 1 kV Vertical GaN-on-GaN p-n Diodes With Low On-Resistance Using Ammonia Molecular Beam Epitaxy", IEEE Electron Device Letters, vol. 41, pp. 1806-1809, 2020.
A., M., and S. J., "Plasma-Assisted Molecular Beam Epitaxy 1", Gallium Oxide, vol. 293: Springer, Cham, 2020.
Khoury, M., H. Li, P. Li, Y. Chao Chow, B. Bonef, H. Zhang, M. S. Wong, S. Pinna, J. Song, J. Choi, et al., "Polarized monolithic white semipolar (202̅1) InGaN light-emitting diodes grown on high quality (202̅1) GaN/sapphire templates and its application to visible light communication", Nano Energy, vol. 67, pp. 104236, 2020.
Bonef, B., C. E. Reilly, F. Wu, S. Nakamura, S. P. DenBaars, S. Keller, and J. S. Speck, "Quantitative investigation of indium distribution in InN wetting layers and dots grown by metalorganic chemical vapor deposition", Applied Physics Express, vol. 13, pp. 065005, may, 2020.
Zhang, H., H. Li, P. Li, J. Song, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Room-Temperature Continuous-Wave Electrically Driven Semipolar (202̅1) Blue Laser Diodes Heteroepitaxially Grown on a Sapphire Substrate", ACS Photonics, vol. 7, pp. 1662-1666, 2020.
Li, P., H. Zhang, H. Li, M. Iza, Y. Yao, M. S. Wong, N. Palmquist, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Size-independent low voltage of InGaN micro-light-emitting diodes with epitaxial tunnel junctions using selective area growth by metalorganic chemical vapor deposition", Opt. Express, vol. 28, pp. 18707–18712, Jun, 2020.
Poliani, E., D. Seidlitz, M. Ries, S. J. Choi, J. S. Speck, A. Hoffmann, and M. R. Wagner, "Strong Near-Field Light–Matter Interaction in Plasmon-Resonant Tip-Enhanced Raman Scattering in Indium Nitride", The Journal of Physical Chemistry C, vol. 124, pp. 28178-28185, 2020.
Monavarian, M., J. Xu, M. N. Fireman, N. Nookala, F. Wu, B. Bonef, K. S. Qwah, E. C. Young, M. A. Belkin, and J. S. Speck, "Structural and optical properties of nonpolar m- and a-plane GaN/AlGaN heterostructures for narrow-linewidth mid-infrared intersubband transitions", Applied Physics Letters, vol. 116, pp. 201103, 2020.
Zollner, C. J., A. S. Almogbel, Y. Yao, M. Wang, M. Iza, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Superlattice hole injection layers for UV LEDs grown on SiC", Opt. Mater. Express, vol. 10, pp. 2171–2180, Sep, 2020.
Lheureux, G., M. Monavarian, R. Anderson, R. A. Decrescent, J. Bellessa, C. Symonds, J. A. Schuller, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Tamm plasmons in metal/nanoporous GaN distributed Bragg reflector cavities for active and passive optoelectronics", Opt. Express, vol. 28, pp. 17934–17943, Jun, 2020.
Qwah, K. S., M. Monavarian, G. Lheureux, J. Wang, Y.-R. Wu, and J. S. Speck, "Theoretical and experimental investigations of vertical hole transport through unipolar AlGaN structures: Impacts of random alloy disorder", Applied Physics Letters, vol. 117, pp. 022107, 2020.
Marcinkevičius, S., and J. S. Speck, "Ultrafast dynamics of hole self-localization in β-Ga2O3", Applied Physics Letters, vol. 116, pp. 132101, 2020.
Yapparov, R., Y. Chao Chow, C. Lynsky, F. Wu, S. Nakamura, J. S. Speck, and S. Marcinkevičius, "Variations of light emission and carrier dynamics around V-defects in InGaN quantum wells", Journal of Applied Physics, vol. 128, pp. 225703, 2020.
Zhang, Y., A. Mauze, F. Alema, A. Osinsky, T. Itoh, and J. S. Speck, "β-Ga2O3 lateral transistors with high aspect ratio fin-shape channels", Japanese Journal of Applied Physics, vol. 60, pp. 014001, dec, 2020.
2019
Mauze, A., Y. Zhang, and J. Speck, "(010) β-Ga2O3 Metal Oxide Catalyzed Epitaxy (MOCATAXY) growth and Sn doping in plasma-assisted molecular beam epitaxy", 2019 Compound Semiconductor Week (CSW), May, 2019.
Seres, J., E. Seres, C. Serrat, E. C. Young, J. S. Speck, and T. Schumm, "All-solid-state VUV frequency comb at 160 nm using high-harmonic generation in nonlinear femtosecond enhancement cavity", Opt. Express, vol. 27, pp. 6618–6628, Mar, 2019.
Fireman, M. N., and J. S. Speck, "Ammonia Molecular Beam Epitaxy of III‐Nitrides", Molecular Beam Epitaxy: Materials and Applications for Electronics and Optoelectronics: John Wiley & Sons Ltd, 2019.
Zhang, Y., A. Mauze, and J. S. Speck, "Anisotropic etching of β-Ga2O3 using hot phosphoric acid", Applied Physics Letters, vol. 115, pp. 013501, 2019.

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