Publications

Found 1578 results
Author Title Type [ Year(Asc)]
2019
Asahi, H., and Y. Horikoshi, "Molecular Beam Epitaxy: Materials and Device Applications", Wiley Series in Materials for Electronic & Optoelectronic Applications: Wiley, 2019.
Bonef, B., S. D. Harrington, D. J. Pennachio, J. S. Speck, and C. J. Palmstrøm, "Nanometer scale structural and compositional inhomogeneities of half-Heusler CoTi1-xFexSb thin films", Journal of Applied Physics, vol. 125, pp. 205301, 2019.
Zhang, Y., A. Mauze, F. Alema, A. Osinsky, and J. S. Speck, "Near unity ideality factor for sidewall Schottky contacts on un-intentionally doped $\upbeta$-Ga2O3", Applied Physics Express, vol. 12, pp. 044005, mar, 2019.
Kudrawiec, R., L. Janicki, W. M. Linhart, M. A. Mayer, I. D. Sharp, S. Choi, O. Bierwagen, J. S. Speck, and W. Walukiewicz, "Photoreflectance and photoinduced microwave reflectance studies of surface band bending in Mg-doped InN", Journal of Applied Physics, vol. 126, pp. 045712, 2019.
Baj, M., L. H. Dmowski, A. Kwiatkowski, J. Przybytek, X. Wang, G. Koblmüller, C. S. Gallinat, and J. S. Speck, "Puzzle of non-surface related 2D electron gas in n-InN epitaxial samples", Journal of Applied Physics, vol. 126, pp. 045705, 2019.
Kamikawa, T., S. Gandrothula, M. Araki, H. Li, V. Bonito Oliva, F. Wu, D. Cohen, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Realization of thin-film m-plane InGaN laser diode fabricated by epitaxial lateral overgrowth and mechanical separation from a reusable growth substrate", Opt. Express, vol. 27, pp. 24717–24723, Aug, 2019.
Almogbel, A., B. SaifAddin, C. Zollner, M. Iza, H. Albrithen, A. Alyamani, A. Albadri, S. Nakamura, S. Denbaars, and J. Speck, "Recent progress in AlGaN UV-C LEDs grown on SiC", 2019 Compound Semiconductor Week (CSW), May, 2019.
Zollner, C. J., A. Almogbel, Y. Yao, B. K. SaifAddin, F. Wu, M. Iza, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Reduced dislocation density and residual tension in AlN grown on SiC by metalorganic chemical vapor deposition", Applied Physics Letters, vol. 115, pp. 161101, 2019.
Kang, C. Hong, G. Liu, C. Lee, O. Alkhazragi, J. M. Wagstaff, K-H. Li, F. Alhawaj, T. Khee Ng, J. S. Speck, S. Nakamura, et al., "Semipolar (202̅1̅) InGaN/GaN micro-photodetector for gigabit-per-second visible light communication", Applied Physics Express, vol. 13, pp. 014001, nov, 2019.
Mehari, S., D. A. Cohen, D. L. Becerra, H. Zhang, C. Weisbuch, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Semipolar III-nitride laser diodes for solid-state lighting", Novel In-Plane Semiconductor Lasers XVIII: International Society for Optics and Photonics, 2019.
Wong, M. S., C. Lee, D. J. Myers, D. Hwang, J. A. Kearns, T. Li, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Size-independent peak efficiency of III-nitride micro-light-emitting-diodes using chemical treatment and sidewall passivation", Applied Physics Express, vol. 12, pp. 097004, aug, 2019.
Alema, F., B. Hertog, P. Mukhopadhyay, Y. Zhang, A. Mauze, A. Osinsky, W. V. Schoenfeld, J. S. Speck, and T. Vogt, "Solar blind Schottky photodiode based on an MOCVD-grown homoepitaxial β-Ga2O3 thin film", APL Materials, vol. 7, pp. 022527, 2019.
Smirnov, A. M., E. C. Young, V. E. Bougrov, J. S. Speck, and A. E. Romanov, "Stress relaxation in semipolar and nonpolar III-nitride heterostructures by formation of misfit dislocations of various origin", Journal of Applied Physics, vol. 126, pp. 245104, 2019.
Seres, J., E. Seres, C. Serrat, E. C. Young, J. S. Speck, and T. Schumm, "VUV Frequency Comb by Cavity-Enhanced High Harmonic Generation on Solid Surfaces", Laser Congress 2019 (ASSL, LAC, LS&C): Optical Society of America, 2019.
2018
Seres, J., E. Seres, C. Serrat, E. C. Young, J. S. Speck, and T. Schumm, All-solid-state VUV frequency comb at 160 nm using multi-harmonic generation in a non-linear femtosecond enhancement cavity, dec, 2018.
Espenlaub, A. C., A. I. Alhassan, S. Nakamura, C. Weisbuch, and J. S. Speck, "Auger-generated hot carrier current in photo-excited forward biased single quantum well blue light emitting diodes", Applied Physics Letters, vol. 112, no. 14: AIP Publishing, pp. 141106, 2018.
Filoche, M., M. Piccardo, C-K. Li, Y-R. Wu, J. S. Speck, B. Bonef, R. M. Farrell, S. Mayboroda, J-M. Lentali, L. Martinelli, et al., "Carrier localization induced by alloy disorder in nitride devices: theory and experiments (Conference Presentation)", Gallium Nitride Materials and Devices XIII, vol. 10532: International Society for Optics and Photonics, pp. 105320S, 2018.
Farzana, E., H. M. Foronda, C. M. Jackson, T. Razzak, Z. Zhang, J. S. Speck, A. R. Arehart, and S. A. Ringel, "Characterization of traps in InAlN by optically and thermally stimulated deep level defect spectroscopies", Journal of Applied Physics, vol. 124, pp. 145703, 2018.
Reparaz, J. S., P. K. da Silva, A. H. Romero, J. Serrano, M. R. Wagner, G. Callsen, S. J. Choi, J. S. Speck, and A. R. Goñi, "Comparative study of the pressure dependence of optical-phonon transverse-effective charges and linewidths in wurtzite InN", Phys. Rev. B, vol. 98, pp. 165204, Oct, 2018.
Farzana, E., E. Ahmadi, J. S. Speck, A. R. Arehart, and S. A. Ringel, "Deep level defects in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy", Journal of Applied Physics, vol. 123, no. 16: AIP Publishing, pp. 161410, 2018.
Alhassan, A. I., N. G. Young, R. M. Farrell, C. Pynn, F. Wu, A. Y. Alyamani, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Development of high performance green c-plane III-nitride light-emitting diodes", Optics express, vol. 26, no. 5: Optical Society of America, pp. 5591–5601, 2018.
Saifaddin, B., C. J. Zollner, A. Almogbel, H. Foronda, F. Wu, A. Albadri, A. Al Yamani, M. Iza, S. Nakamura, S. P. DenBaars, et al., "Developments in AlGaN and UV-C LEDs grown on SiC", Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXII, vol. 10554: International Society for Optics and Photonics, pp. 105541E, 2018.
Neal, A. T., S. Mou, S. Rafique, H. Zhao, E. Ahmadi, J. S. Speck, K. T. Stevens, J. D. Blevins, D. B. Thomson, N. Moser, et al., "Donors and deep acceptors in β-Ga2O3", Applied Physics Letters, vol. 113, pp. 062101, 2018.
Bonef, B., R. Cramer, and J. S. Speck, "Erratum:Nanometer scale composition study of MBE grown BGaN performed by atom probe tomography", Journal of Applied Physics, vol. 123, no. 1: AIP Publishing, pp. 019901, 2018.
Hahn, W., J.-M. Lentali, P. Polovodov, N. Young, S. Nakamura, J. S. Speck, C. Weisbuch, M. Filoche, Y.-R. Wu, M. Piccardo, et al., "Evidence of nanoscale Anderson localization induced by intrinsic compositional disorder in InGaN/GaN quantum wells by scanning tunneling luminescence spectroscopy", Phys. Rev. B, vol. 98, pp. 045305, Jul, 2018.

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