| Title | InxGa1-xN Alloys Grown by Plasma-Assisted Molecular Beam Epitaxy (PAMBE) with Growth Rates Up to 1.3 μm/hr |
| Publication Type | Conference Paper |
| Year of Publication | 2019 |
| Authors | Jorgensen, K. F., and J. S. Speck |
| Conference Name | 2019 Compound Semiconductor Week (CSW) |
| Date Published | May |
| Keywords | 1-x N alloys grown, active nitrogen, crystal structure, gallium compounds, growth parameters, growth rates, growth temperatures, high quality crystal structure, III-V semiconductors, indium compounds, indium gallium nitride films, InxGa1-xN, molecular beam epitaxial growth, PAMBE, plasma materials processing, plasma-assisted molecular beam epitaxy, semiconductor epitaxial layers, semiconductor growth, surface morphology, temperature 550.0 degC, temperature 600.0 degC, temperature 700.0 degC, wide band gap semiconductors |
| DOI | 10.1109/ICIPRM.2019.8819077 |
